A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.A polysilicon emitter (PolyE) double mesa microwave power SiGe HBT showing e...A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.A polysilicon emitter (PolyE) double mesa microwave power SiGe HBT showing excellent low current DC characteristics with β=60@V CE/I C=9.0V/300μA,β=100@5V/50mA,BV CBO=22V,f t/f max=5.4GHz/7.7GHz@3V/10mA is demonstrated.The PolyE SiGe HBT needs only 6 lithographical steps and cancels the growth of the thick emitter epitaxy layer,both of which show great potential for volume production.A 60-finger class-A SiGe linear power amplifer (PA) w ith 22dBm of 1dB compress point output power (P 1dB),11dB of power gain (G p) and 26.1% of power added efficiency (PAE) @900MHz,3.5V/0.2A is demonstrated.Another 120-finger class-A SiGe PA with 33.3dBm (2.1W) of P out,10.3dB of G p and 33.9% of PAE @900MHz,11V/0.52A is also demonstrated.展开更多
The strained SiGe material has been grown by using the newly developed High Vacuum/Rapid Thermal Processing/Chemical Vapor Deposition (HV/RTP/CVD) system.Device quality material is grown by handling process after car...The strained SiGe material has been grown by using the newly developed High Vacuum/Rapid Thermal Processing/Chemical Vapor Deposition (HV/RTP/CVD) system.Device quality material is grown by handling process after careful design. The Ge fraction varies up to 0 25, and the n and p type doping is well controlled,which are both adapted to the fabrication of Heterojunction Bipolar Transistors (HBT). The SiGe HBT structure, namely n Si/i p + i SiGe/n Si structure, has been investigated, with which, the HBTs are fabricated and show good performance. The new system has been proved potential and practicable.展开更多
文摘A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.A polysilicon emitter (PolyE) double mesa microwave power SiGe HBT showing excellent low current DC characteristics with β=60@V CE/I C=9.0V/300μA,β=100@5V/50mA,BV CBO=22V,f t/f max=5.4GHz/7.7GHz@3V/10mA is demonstrated.The PolyE SiGe HBT needs only 6 lithographical steps and cancels the growth of the thick emitter epitaxy layer,both of which show great potential for volume production.A 60-finger class-A SiGe linear power amplifer (PA) w ith 22dBm of 1dB compress point output power (P 1dB),11dB of power gain (G p) and 26.1% of power added efficiency (PAE) @900MHz,3.5V/0.2A is demonstrated.Another 120-finger class-A SiGe PA with 33.3dBm (2.1W) of P out,10.3dB of G p and 33.9% of PAE @900MHz,11V/0.52A is also demonstrated.
文摘The strained SiGe material has been grown by using the newly developed High Vacuum/Rapid Thermal Processing/Chemical Vapor Deposition (HV/RTP/CVD) system.Device quality material is grown by handling process after careful design. The Ge fraction varies up to 0 25, and the n and p type doping is well controlled,which are both adapted to the fabrication of Heterojunction Bipolar Transistors (HBT). The SiGe HBT structure, namely n Si/i p + i SiGe/n Si structure, has been investigated, with which, the HBTs are fabricated and show good performance. The new system has been proved potential and practicable.
