Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, str...Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, structural, morphological, and optical properties of the In2S3 films were investigated. In all deposited samples, the x-ray diffraction spectra revealed the formation of cubic In2S3 phase. A significant increase in the crystallite size was observed after Ag doping,while the doping of Sn slightly decreased the crystallite size. The x-ray photoelectron spectroscopy verified the diffusion of Ag and Sn into the In2S3 films after annealing. The optical study illustrated that Ag doping resulted in a reduction of the optical band gap while Sn doping led to a widening of the gap. Optical properties were investigated to determine the optical constants. Besides, it was found that the resistivity decreases significantly either after Ag or Sn incorporation. The study demonstrates that the Sn-doped In2S3 thin films are more suitable for buffer layer application in solar cells than the Ag-doped In2S3 thin films.展开更多
The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the ...The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the simulation is Al/ZnO：Al/nZn（O,S）/pCZTS/Mo. The primary motivation of this simulation work is to optimize the composition in the ZnO1-xSx buffer layer, which would yield higher conversion efficiency. By varying S/（S＋O） ratio x, the conduction band offset （CBO） at CZTS/Zn（O,S） interface can range from -0.23 eV to 1.06eV if the full range of the ratio is considered. The optimal CBO of 0.23eV can be achieved when the ZnO1-xSx buffer has an S/（S＋O） ratio of 0.6. The solar cell efficiency first increases with increasing sulfur content and then decreases abruptly for x〉 0.6, which reaches the highest value of 17.55% by our proposed optimal sulfur content x= 0.6. Our results provide guidance in dealing with the ZnO1-xSx buffer layer deposition for high efficiency CZTS solar cells.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61076063,61340051,and 61306120)the Natural Science Foundation of Fujian Province,China(Grant No.2014J05073)
文摘Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, structural, morphological, and optical properties of the In2S3 films were investigated. In all deposited samples, the x-ray diffraction spectra revealed the formation of cubic In2S3 phase. A significant increase in the crystallite size was observed after Ag doping,while the doping of Sn slightly decreased the crystallite size. The x-ray photoelectron spectroscopy verified the diffusion of Ag and Sn into the In2S3 films after annealing. The optical study illustrated that Ag doping resulted in a reduction of the optical band gap while Sn doping led to a widening of the gap. Optical properties were investigated to determine the optical constants. Besides, it was found that the resistivity decreases significantly either after Ag or Sn incorporation. The study demonstrates that the Sn-doped In2S3 thin films are more suitable for buffer layer application in solar cells than the Ag-doped In2S3 thin films.
基金Supported by the Guiding Project of Strategic Emerging Industries of Fujian Provincial Department of Science and Technology under Grant No 2015H0010the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure of Shanghai Institute of Ceramics of Chinese Academy of Sciences under Grant No SKL201404SICthe Natural Science Foundation of Fujian Province under Grant No 2016J01751
文摘The Cu2ZnSnS4 （CZTS）-based solar cell is numerically simulated by a one-dimensional solar cell simulation soft- ware analysis of microelectronic and photonic structures （AMPS-1D）. The device structure used in the simulation is Al/ZnO：Al/nZn（O,S）/pCZTS/Mo. The primary motivation of this simulation work is to optimize the composition in the ZnO1-xSx buffer layer, which would yield higher conversion efficiency. By varying S/（S＋O） ratio x, the conduction band offset （CBO） at CZTS/Zn（O,S） interface can range from -0.23 eV to 1.06eV if the full range of the ratio is considered. The optimal CBO of 0.23eV can be achieved when the ZnO1-xSx buffer has an S/（S＋O） ratio of 0.6. The solar cell efficiency first increases with increasing sulfur content and then decreases abruptly for x〉 0.6, which reaches the highest value of 17.55% by our proposed optimal sulfur content x= 0.6. Our results provide guidance in dealing with the ZnO1-xSx buffer layer deposition for high efficiency CZTS solar cells.
