Due to excellent thermal stability and optoelectronic properties, all-inorganic perovskite is one of the promising candidates to solve the thermal decomposition problem of conventional organic–inorganic hybrid perovs...Due to excellent thermal stability and optoelectronic properties, all-inorganic perovskite is one of the promising candidates to solve the thermal decomposition problem of conventional organic–inorganic hybrid perovskite solar cells(PSCs),but the larger voltage loss(V_(loss)) cannot be ignored, especially CsPbIBr_(2), which limits the improvement of efficiency. To reduce V_(loss), one promising solution is the modification of the energy level alignment between the perovskite layer and adjacent charge transport layer(CTL), which can facilitate charge extraction and reduce carrier recombination rate at the perovskite/CTL interface. Therefore, the key issues of minimum V_(loss) and high efficiency of CsPbIBr_(2)-based PSCs were studied in terms of the perovskite layer thickness, the effects of band offset of the CTL/perovskite layer, the doping concentration of the CTL, and the electrode work function in this study based on device simulations. The open-circuit voltage(V_(oc)) is increased from 1.37 V to 1.52 V by replacing SnO_(2) with ZnO as the electron transport layer(ETL) due to more matching conduction band with the CsPbIBr;layer.展开更多
基金financially supported by the National Natural Science Foundation of China (Grant No. 52192610)the Key Research and Development Program of Shaanxi Province, China (Grant No. 2020GY-310)+2 种基金Youth Project of Natural Science Basic Research Program of Shaanxi Province, China (Grant No. 2021JQ-189)the Joint Research Funds of Department of Science & Technology of Shaanxi Province and Northwestern Polytechnical University (Grant No. 2020GXLH-Z-018)the Fundamental Research Funds for the Central Universities, China。
文摘Due to excellent thermal stability and optoelectronic properties, all-inorganic perovskite is one of the promising candidates to solve the thermal decomposition problem of conventional organic–inorganic hybrid perovskite solar cells(PSCs),but the larger voltage loss(V_(loss)) cannot be ignored, especially CsPbIBr_(2), which limits the improvement of efficiency. To reduce V_(loss), one promising solution is the modification of the energy level alignment between the perovskite layer and adjacent charge transport layer(CTL), which can facilitate charge extraction and reduce carrier recombination rate at the perovskite/CTL interface. Therefore, the key issues of minimum V_(loss) and high efficiency of CsPbIBr_(2)-based PSCs were studied in terms of the perovskite layer thickness, the effects of band offset of the CTL/perovskite layer, the doping concentration of the CTL, and the electrode work function in this study based on device simulations. The open-circuit voltage(V_(oc)) is increased from 1.37 V to 1.52 V by replacing SnO_(2) with ZnO as the electron transport layer(ETL) due to more matching conduction band with the CsPbIBr;layer.
基金supported by the National Natural Science Foundation of China (52192610 and 62274127)the National Key Research and Development Program of China (2021YFA0715600, 2021YFA0717700 and 2018YFB2202900)+1 种基金Wuhu and Xidian University Special Fund for Industry-University Research Cooperationthe Fundamental Research Funds for the Central Universities。
文摘低维非铅金属卤化物材料因其优异的光电特性在可见光盲紫外探测领域具有很大的潜力.本文通过吡啶添加剂辅助一步溶液法成功制备了高质量类钙钛矿CsAg_(2)I_(3)薄膜,该薄膜展示出p型及202 meV低激子结合能(Eb).其Eb甚至和2D铅卤钙钛矿相当,有利于光生载流子分离.此外,探索了基于type-Ⅱ型n-p异质结SnO_(2)/CsAg_(2)I_(3)的自驱动紫外探测器,其中4.13 eV宽带隙、0.214 eV低Urbach能量的SnO_(2)的引入抑制了持续光电导效应.所制备的探测器件具有高灵敏特性及在可见光盲紫外探测器中超快的响应时间(47/74μs),大致快于当前CsAg_(2)I_(3)探测器数值的两个数量级.其响应度和探测率分别高达0.032 A W^(-1)和1.2×10^(11)Jones.此外,异质结>90%高可见光透光性展现出优越的可见光盲特性.这种优异的器件性能、可溶液法制备及长期稳定性为未来可见光盲、自驱动、稳定、环保的商用紫外探测器的制备提供了新思路.
基金supported by the National Natural Science Foundation of China (61604071, 61525402, 61604119, 61704131 and 61775095)Natural Science Foundation of Jiangsu Province (BK20161012)+1 种基金Postgraduate Research & Practice Innovation Program of Jiangsu Province (SJZZ16_0139)SICAM Scholarship (38600001)
