In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition(MOCVD) system. The r...In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition(MOCVD) system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses(tensile and compressive) during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.展开更多
The influences of stress on the properties of InGaN/GaN multiple quantum wells (MQWs) grown on silicon substrate were investigated. The different stresses were induced by growing InGaN and A1GaN insertion layers (I...The influences of stress on the properties of InGaN/GaN multiple quantum wells (MQWs) grown on silicon substrate were investigated. The different stresses were induced by growing InGaN and A1GaN insertion layers (IL) respectively before the growth of MQWs in metal-organic chemical vapor deposition (MOCVD) system. High resolution x-ray diffrac- tion (HRXRD) and photoluminescence (PL) measurements demonstrated that the InGaN IL introduced an additional ten- sile stress in n-GaN, which released the strain in MQWs. It is helpful to increase the indium incorporation in MQWs. In comparison with MQWs without the IL, the wavelength shows a red-shift. A1GaN IL introduced a compressive stress to compensate the tensile stress, which reduces the indium composition in MQWs. PL measurement shows a blue-shift of wavelength. The two kinds of ILs were adopted to InGaN/GaN MQWs LED structures. The same wavelength shifts were also observed in the electroluminescence (EL) measurements of the LEDs. Improved indium homogeneity with InGaN IL, and phase separation with A1GaN IL were observed in the light images of the LEDs.展开更多
Crack-free Ga N/In Ga N multiple quantum wells(MQWs) light-emitting diodes(LEDs) are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up...Crack-free Ga N/In Ga N multiple quantum wells(MQWs) light-emitting diodes(LEDs) are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer(TCL), which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 51177175)the National Basic Research Program of China(Grant No.2011CB301903)+5 种基金the Ph.D.Programs Foundation of Ministry of Education of China(Grant No.20110171110021)the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260)the International Science and Technology Collaboration Program of Guangdong Province,China(Grant No.2013B051000041)the Science and Technology Plan of Guangdong Province,China(Grant No.2013B010401013)the National High Technology Research and Development Program of China(Grant No.2014AA032606)the Opened Fund of the State Key Laboratory on Integrated Optoelectronics,China(Grant No.IOSKL2014KF17)
文摘In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition(MOCVD) system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses(tensile and compressive) during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 51177175)the National Basic Research Program of China(Grant Nos.2010CB923201 and 2011CB301903)+4 种基金the Ph.D.Program Foundation of the Ministry of Education of China(Grant No.20110171110021)the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260)the National High Technology Research and Development Program of China(Grant No.2014AA032606)the International Science and Technology Collaboration Program of Guangdong Province,China(Grant No.2013B051000041)the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(Grant No.IOSKL2014KF17)
文摘The influences of stress on the properties of InGaN/GaN multiple quantum wells (MQWs) grown on silicon substrate were investigated. The different stresses were induced by growing InGaN and A1GaN insertion layers (IL) respectively before the growth of MQWs in metal-organic chemical vapor deposition (MOCVD) system. High resolution x-ray diffrac- tion (HRXRD) and photoluminescence (PL) measurements demonstrated that the InGaN IL introduced an additional ten- sile stress in n-GaN, which released the strain in MQWs. It is helpful to increase the indium incorporation in MQWs. In comparison with MQWs without the IL, the wavelength shows a red-shift. A1GaN IL introduced a compressive stress to compensate the tensile stress, which reduces the indium composition in MQWs. PL measurement shows a blue-shift of wavelength. The two kinds of ILs were adopted to InGaN/GaN MQWs LED structures. The same wavelength shifts were also observed in the electroluminescence (EL) measurements of the LEDs. Improved indium homogeneity with InGaN IL, and phase separation with A1GaN IL were observed in the light images of the LEDs.
基金supported by the National Natural Science Foundation of China(Grant Nos.61274039 and 51177175)the National Basic Research Program of China(Grant Nos.2010CB923201 and 2011CB301903)+1 种基金the Ph.D. Program Foundation of Ministry of Education of China(Grant No.20110171110021)the Foundation of the Key Technologies R&D Program of Guangdong Province,China(Grant No.2010A081002005)
文摘Crack-free Ga N/In Ga N multiple quantum wells(MQWs) light-emitting diodes(LEDs) are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer(TCL), which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.