Chalcopyrite Cu(In,Ga)Se_(2)(CIGS) thin films deposited in a low-temperature process(450℃) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting ...Chalcopyrite Cu(In,Ga)Se_(2)(CIGS) thin films deposited in a low-temperature process(450℃) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.展开更多
基金The work was supported by the National Key R&D Program of China(No.2018YFB1500200)National Natural Science Foundation of China(Nos.61774089 and 61974076)Natural Science Foundation of Tianjin(No.18JCZDJC31200)。
文摘Chalcopyrite Cu(In,Ga)Se_(2)(CIGS) thin films deposited in a low-temperature process(450℃) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.
