In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 .heterostructures de- posited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P-E h...In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 .heterostructures de- posited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P-E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage (Vmax). At a Vmax of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a Vmax of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I-V curve fitting.展开更多
We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current-voltage(I-V) curve exhibits a ...We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current-voltage(I-V) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures(〈 253 K), the I-V curve shows an open circuit voltage(OCV), which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures(〉 253 K), the I-V behaviors are governed by both space-charge-limited conduction(SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of〉 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.展开更多
传统的 SMD LED 显示屏器件所用的环氧树脂封装材料,存在容易黄变、吸湿大、杂质含量高、涨缩大等缺陷,限制了其在 高密显示领域中的应用,通过环氧树脂改性可弥补其作为高密显示器件封装材料的缺陷。本文综述了 LED 显示屏器件环氧树...传统的 SMD LED 显示屏器件所用的环氧树脂封装材料,存在容易黄变、吸湿大、杂质含量高、涨缩大等缺陷,限制了其在 高密显示领域中的应用,通过环氧树脂改性可弥补其作为高密显示器件封装材料的缺陷。本文综述了 LED 显示屏器件环氧树脂封装技术发 展,以及在阐述了抗黄变、低吸湿、低杂质、低涨缩性等方面的优势,并展望了高密 LED 显示屏器件封装用改性环氧树脂封装材料的发展 前景。展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.51072061,51031004,and 51272078)the Program for Changjiang Scholars and Innovative Research Team in Universitythe Priority Academic Program Development of Jiangsu Higher Education Institutions,China
文摘In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 .heterostructures de- posited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P-E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage (Vmax). At a Vmax of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a Vmax of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I-V curve fitting.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51272078 and 51332007)the State Key Program for Basic Research of China(Grant No 2015CB921202)+2 种基金the Guangdong Provincial Universities and Colleges Pearl River Scholar Funded Scheme,China(2014)the International Science&Technology Cooperation Platform Program of Guangzhou,China(Grant No.2014J4500016)the Program for Changjiang Scholars and Innovative Research Team in University of China(Grant No.IRT1243)
文摘We investigate the resistive switching and ferroelectric polarization properties of high-quality epitaxial BiFeO3 thin films in various temperature ranges. The room temperature current-voltage(I-V) curve exhibits a well-established polarization-modulated memristor behavior. At low temperatures(〈 253 K), the I-V curve shows an open circuit voltage(OCV), which possibly originates from the dielectric relaxation effects, accompanied with a current hump due to the polarization reversal displacement current. While at relative higher temperatures(〉 253 K), the I-V behaviors are governed by both space-charge-limited conduction(SCLC) and Ohmic behavior. The polarization reversal is able to trigger the conduction switching from Ohmic to SCLC behavior, leading to the observed ferroelectric resistive switching. At a temperature of〉 298 K, there occurs a new resistive switching hysteresis at high bias voltages, which may be related to defect-mediated effects.
文摘传统的 SMD LED 显示屏器件所用的环氧树脂封装材料,存在容易黄变、吸湿大、杂质含量高、涨缩大等缺陷,限制了其在 高密显示领域中的应用,通过环氧树脂改性可弥补其作为高密显示器件封装材料的缺陷。本文综述了 LED 显示屏器件环氧树脂封装技术发 展,以及在阐述了抗黄变、低吸湿、低杂质、低涨缩性等方面的优势,并展望了高密 LED 显示屏器件封装用改性环氧树脂封装材料的发展 前景。