Hexagonal GaN is grown on a Si（111） substrate with AIN as a buffer layer by gas source molecular beam epitaxy （GSMBE） with ammonia. The thickness of AIN buffer is changed from 9 to 72 nm. When the thickness of AIN...Hexagonal GaN is grown on a Si（111） substrate with AIN as a buffer layer by gas source molecular beam epitaxy （GSMBE） with ammonia. The thickness of AIN buffer is changed from 9 to 72 nm. When the thickness of AIN buffer is 36 nm, the surface morphology and crystal quality of GaN is optimal The in-situ reflection high energy electron diffraction （RHEED） reveals that the transition to a two-dimensional growth mode of AIN is the key to the quality of GaN. However, the thickness of AIN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si（111） by GSMBE for AIN thickness between 9 to 72nm.展开更多
The X-ray diffraction analyses show that the existence of a continuous solid solution of Al_xSb_ 3-xY_5 (0≤x≤216). Al_xSb_ 3-xY_5 crystallizes in the hexagonal system with the space group P6_3/mcm (193) and Mn_5Si_3...The X-ray diffraction analyses show that the existence of a continuous solid solution of Al_xSb_ 3-xY_5 (0≤x≤216). Al_xSb_ 3-xY_5 crystallizes in the hexagonal system with the space group P6_3/mcm (193) and Mn_5Si_3 structure type. The cell parameters for Al_2SbY_5 compound at 25 ℃ are a=0.88086 (2) nm, c=0.64662 (2) nm.展开更多
文摘Hexagonal GaN is grown on a Si（111） substrate with AIN as a buffer layer by gas source molecular beam epitaxy （GSMBE） with ammonia. The thickness of AIN buffer is changed from 9 to 72 nm. When the thickness of AIN buffer is 36 nm, the surface morphology and crystal quality of GaN is optimal The in-situ reflection high energy electron diffraction （RHEED） reveals that the transition to a two-dimensional growth mode of AIN is the key to the quality of GaN. However, the thickness of AIN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si（111） by GSMBE for AIN thickness between 9 to 72nm.
文摘The X-ray diffraction analyses show that the existence of a continuous solid solution of Al_xSb_ 3-xY_5 (0≤x≤216). Al_xSb_ 3-xY_5 crystallizes in the hexagonal system with the space group P6_3/mcm (193) and Mn_5Si_3 structure type. The cell parameters for Al_2SbY_5 compound at 25 ℃ are a=0.88086 (2) nm, c=0.64662 (2) nm.
