采用离子束溅射方法,在玻璃衬底上沉积Cu,In,Al和Se,在同一真空环境下进行退火处理,制备得到铜铟铝硒(CIAS)太阳电池吸收层薄膜。利用扫描电镜、X射线衍射仪、能谱仪、四探针系统、分光光度计分别对薄膜的表面形貌、物相结构、晶粒尺寸...采用离子束溅射方法,在玻璃衬底上沉积Cu,In,Al和Se,在同一真空环境下进行退火处理,制备得到铜铟铝硒(CIAS)太阳电池吸收层薄膜。利用扫描电镜、X射线衍射仪、能谱仪、四探针系统、分光光度计分别对薄膜的表面形貌、物相结构、晶粒尺寸、元素含量、电阻率和禁带宽度等特性进行分析。结果表明:通过控制铜铟、Cu、Al、Se各靶材的镀膜时间,实现在Cu In Se2薄膜上掺杂Al元素,制备的CIAS薄膜呈现黄铜矿结构。薄膜(112)衍射峰峰位,表面电阻率和禁带宽度随着铝含量的增加而增加,调节Al元素的含量可以使薄膜表面均匀。当Al的原子分数比X(Al)=14.47%时,(112)衍射峰最强,半高宽最小,结晶最好。当X(Al)=11.8%,N(Al)/(N(In)+N(Al))=0.37,禁带宽度为2.12 e V,薄膜表面形貌最均匀。展开更多
采用X射线衍射仪、扫描电子显微镜、能量色散谱仪、分光光度计、荧光光谱仪和霍尔系数测试仪等,对单源真空热蒸发法直接制备的钙钛矿太阳电池吸收层HC(NH_2)_2PbI_3薄膜的晶化和微观结构以及表面形貌、化学元素计量比、光学和电学性能...采用X射线衍射仪、扫描电子显微镜、能量色散谱仪、分光光度计、荧光光谱仪和霍尔系数测试仪等,对单源真空热蒸发法直接制备的钙钛矿太阳电池吸收层HC(NH_2)_2PbI_3薄膜的晶化和微观结构以及表面形貌、化学元素计量比、光学和电学性能进行表征分析.结果表明,单源真空热蒸发法制备的HC(NH_2)_2PbI_3薄膜表面均匀、致密且平整,薄膜结晶度高,具有典型的钙钛矿晶体结构,薄膜的化学成分符合HC(NH_2)_2PbI_3薄膜的理想化学计量比,其禁带宽度为1.5 e V,满足钙钛矿太阳电池用薄膜的光学性能,将直接有利于钙钛矿太阳电池效率的提高.展开更多
Copper indium diselenide （CuInSe2） thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-...Copper indium diselenide （CuInSe2） thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential （112） orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1：1：2. Raman measurement shows that the main peak is at about 174cm^-1 and this peak is identified as the A1 vibrational mode from chaicopyrite ordered CulnSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05 eV and an absorption coefficient of 10^5 cm^-1. The film resistivity is about 0.01 Ωcm.展开更多
文摘采用离子束溅射方法,在玻璃衬底上沉积Cu,In,Al和Se,在同一真空环境下进行退火处理,制备得到铜铟铝硒(CIAS)太阳电池吸收层薄膜。利用扫描电镜、X射线衍射仪、能谱仪、四探针系统、分光光度计分别对薄膜的表面形貌、物相结构、晶粒尺寸、元素含量、电阻率和禁带宽度等特性进行分析。结果表明:通过控制铜铟、Cu、Al、Se各靶材的镀膜时间,实现在Cu In Se2薄膜上掺杂Al元素,制备的CIAS薄膜呈现黄铜矿结构。薄膜(112)衍射峰峰位,表面电阻率和禁带宽度随着铝含量的增加而增加,调节Al元素的含量可以使薄膜表面均匀。当Al的原子分数比X(Al)=14.47%时,(112)衍射峰最强,半高宽最小,结晶最好。当X(Al)=11.8%,N(Al)/(N(In)+N(Al))=0.37,禁带宽度为2.12 e V,薄膜表面形貌最均匀。
文摘采用X射线衍射仪、扫描电子显微镜、能量色散谱仪、分光光度计、荧光光谱仪和霍尔系数测试仪等,对单源真空热蒸发法直接制备的钙钛矿太阳电池吸收层HC(NH_2)_2PbI_3薄膜的晶化和微观结构以及表面形貌、化学元素计量比、光学和电学性能进行表征分析.结果表明,单源真空热蒸发法制备的HC(NH_2)_2PbI_3薄膜表面均匀、致密且平整,薄膜结晶度高,具有典型的钙钛矿晶体结构,薄膜的化学成分符合HC(NH_2)_2PbI_3薄膜的理想化学计量比,其禁带宽度为1.5 e V,满足钙钛矿太阳电池用薄膜的光学性能,将直接有利于钙钛矿太阳电池效率的提高.
基金Supported by the Natural Science Foundation of Guangdong Province under Grant No 7009409, and Program of Science and Technology of Shenzhen under Grant No 200729.
文摘Copper indium diselenide （CuInSe2） thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential （112） orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1：1：2. Raman measurement shows that the main peak is at about 174cm^-1 and this peak is identified as the A1 vibrational mode from chaicopyrite ordered CulnSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05 eV and an absorption coefficient of 10^5 cm^-1. The film resistivity is about 0.01 Ωcm.
