In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metal...In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 gm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source.展开更多
A single-transistor CMOS active pixel image sensor(1T CMOS APS)architecture is proposed,By switching the photosensing pinned diode,resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-...A single-transistor CMOS active pixel image sensor(1T CMOS APS)architecture is proposed,By switching the photosensing pinned diode,resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower.Thus,the reset and selected transistors can be removed.In addition,the reset and selected signal lines can be shared to reduce the metal signal line,leading to a very high fill factor.The pixel design and operation principles are discussed in detail.The functionality of the proposed 1 T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35μm CMOS AMIS technology.展开更多
基金Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61036004)the Shenzhen Science & Technology Foundation, China (Grant No. CXB201005250031A)+1 种基金the Fundamental Research Project of Shenzhen Science & Technology Foundation, China (Grant No. JC201005280670A)the International Collaboration Project of Shenzhen Science & Technology Foundation, China (Grant No. ZYA2010006030006A)
文摘In this paper we report on a study of the CMOS image sensor detection of DNA based on self-assembled nano- metallic particles, which are selectively deposited on the surface of the passive image sensor. The nano-metallic particles effectively block the optical radiation in the visible spectrum of ordinary light source. When such a technical method is applied to DNA detection, the requirement for a special UV light source in the most popular fluorescence is eliminated. The DNA detection methodology is tested on a CMOS sensor chip fabricated using a standard 0.5 gm CMOS process. It is demonstrated that the approach is highly selective to detecting even a signal-base mismatched DNA target with an extremely-low-concentration DNA sample down to 10 pM under an ordinary light source.
基金Supported by the Key Project of National Natural Science Foundation of China(61036004)the Guangdong Natural Science Foundation(10466585979-2004985)+2 种基金the Shenzhen Science&Technology Foundation(CXB201005250031A)the Fundamental Research Project of Shenzhen Science&Technology Foundation(JC201005280670A)the International Collaboration Project of Shenzhen Science&Technology Foundation(ZYA2010006030006A)。
文摘A single-transistor CMOS active pixel image sensor(1T CMOS APS)architecture is proposed,By switching the photosensing pinned diode,resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower.Thus,the reset and selected transistors can be removed.In addition,the reset and selected signal lines can be shared to reduce the metal signal line,leading to a very high fill factor.The pixel design and operation principles are discussed in detail.The functionality of the proposed 1 T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35μm CMOS AMIS technology.
