We have realized robust quantum anomalous Hall samples by protecting Cr-doped（Bi,Sb）2Te3 topological insulator films with a combination of LiF and A1Ox capping layers.The AlOx/LiF composite capping layer well keeps ...We have realized robust quantum anomalous Hall samples by protecting Cr-doped（Bi,Sb）2Te3 topological insulator films with a combination of LiF and A1Ox capping layers.The AlOx/LiF composite capping layer well keeps the quantum anomalous Hall states of Cr-doped（Bi,Sb）2Te3 films and effectively prevent them from degradation induced by ambient conditions.The progress is a key step towards the realization of the quantum phenomena in heterostructures and devices based on quantum anomalous Hall system.展开更多
We report high transition temperature superconductivity in one unit-cell(UC)thick FeSe films grown on a Seetched SrTiO_(3)(001)substrate by molecular beam epitaxy(MBE).A superconducting gap as large as 20 meV and the ...We report high transition temperature superconductivity in one unit-cell(UC)thick FeSe films grown on a Seetched SrTiO_(3)(001)substrate by molecular beam epitaxy(MBE).A superconducting gap as large as 20 meV and the magnetic field induced vortex state revealed by in situ scanning tunneling microscopy(STM)suggest that the superconductivity of the 1 UC FeSe films could occur around 77K.The control transport measurement shows that the onset superconductivity temperature is well above 50K.Our work not only demonstrates a powerful way for finding new superconductors and for raising Tc,but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.展开更多
Three-dimensional(3 D)topological insulators(TIs)are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure.Rapid,low-cost pre...Three-dimensional(3 D)topological insulators(TIs)are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure.Rapid,low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs.Here we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering.The SiO2/Si substrates enable us to electrically tune(Bi1-xSbx)2Te3 and Cr-doped(Bi1-xSbx)2 Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states,such as the quantum anomalous Hall effect(QAHE).This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.展开更多
在利用光刻将拓扑绝缘体外延薄膜加工成微米尺寸结构的过程中,所用的各种化学物质会导致薄膜质量的下降.在实验中,通过在钛酸锶衬底上预先光刻出Hall bar形状的凸平台并以此为模板进行拓扑绝缘体(Bi x Sb1-x)2Te3薄膜的分子束外延生长,...在利用光刻将拓扑绝缘体外延薄膜加工成微米尺寸结构的过程中,所用的各种化学物质会导致薄膜质量的下降.在实验中,通过在钛酸锶衬底上预先光刻出Hall bar形状的凸平台并以此为模板进行拓扑绝缘体(Bi x Sb1-x)2Te3薄膜的分子束外延生长,直接获得了薄膜的Hall bar微器件,从而避免了光刻过程对材料质量的影响.原子力显微镜和输运测量结果均显示该微器件保持了(Bi x Sb1-x)2Te3外延薄膜原有的性质.这种新的微器件制备方法有助于在拓扑绝缘体中实现各种新奇的量子效应,并可推广于其他外延生长的低维系统.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.11325421)
文摘We have realized robust quantum anomalous Hall samples by protecting Cr-doped（Bi,Sb）2Te3 topological insulator films with a combination of LiF and A1Ox capping layers.The AlOx/LiF composite capping layer well keeps the quantum anomalous Hall states of Cr-doped（Bi,Sb）2Te3 films and effectively prevent them from degradation induced by ambient conditions.The progress is a key step towards the realization of the quantum phenomena in heterostructures and devices based on quantum anomalous Hall system.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10721404 and 11134008the National Basic Research Program of China under Grant No 2009CB929400.
文摘We report high transition temperature superconductivity in one unit-cell(UC)thick FeSe films grown on a Seetched SrTiO_(3)(001)substrate by molecular beam epitaxy(MBE).A superconducting gap as large as 20 meV and the magnetic field induced vortex state revealed by in situ scanning tunneling microscopy(STM)suggest that the superconductivity of the 1 UC FeSe films could occur around 77K.The control transport measurement shows that the onset superconductivity temperature is well above 50K.Our work not only demonstrates a powerful way for finding new superconductors and for raising Tc,but also provides a well-defined platform for systematic studies of the mechanism of unconventional superconductivity by using different superconducting materials and substrates.
基金National Key R&D Plan Program of China(Grant No.2017YFF0206104)National Key Scien-tific Research Projects of China(Grant No.2015CB921502)+3 种基金National Natural Science Foundation of China(Grant Nos.61574169 and 51871018)Beijing Laboratory of Metallic Materials and Processing for Modern Transportation,the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of SciencesBeijing Natural Science Foundation(Grant No.Z180014)Beijing Outstanding Young Scientists Projects(Grant No.BJJWZYJH01201910005018)。
文摘Three-dimensional(3 D)topological insulators(TIs)are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure.Rapid,low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs.Here we show that wafer-sized Bi2Te3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO2/Si substrates by magnetron cosputtering.The SiO2/Si substrates enable us to electrically tune(Bi1-xSbx)2Te3 and Cr-doped(Bi1-xSbx)2 Te3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states,such as the quantum anomalous Hall effect(QAHE).This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.
文摘在利用光刻将拓扑绝缘体外延薄膜加工成微米尺寸结构的过程中,所用的各种化学物质会导致薄膜质量的下降.在实验中,通过在钛酸锶衬底上预先光刻出Hall bar形状的凸平台并以此为模板进行拓扑绝缘体(Bi x Sb1-x)2Te3薄膜的分子束外延生长,直接获得了薄膜的Hall bar微器件,从而避免了光刻过程对材料质量的影响.原子力显微镜和输运测量结果均显示该微器件保持了(Bi x Sb1-x)2Te3外延薄膜原有的性质.这种新的微器件制备方法有助于在拓扑绝缘体中实现各种新奇的量子效应,并可推广于其他外延生长的低维系统.
