Amorphous carbon films are deposited on the Mo film/ceramic substrates, which are pretreated by a laser spattering chiselling technique （2 line/mm）, by using the microwave chemical vapour deposition technique. The f...Amorphous carbon films are deposited on the Mo film/ceramic substrates, which are pretreated by a laser spattering chiselling technique （2 line/mm）, by using the microwave chemical vapour deposition technique. The films are characterized by x-ray diffraction, Raman spectrum, optical microscopy, and scanning electron microscopy. The experimental result indicates that the laser spattering chiselling pretreated techniques can essentially improve the field emission uniformity and the emission site density of the amorphous carbon thin film devices so that its emission site density can reach the level of actual application （undistinguishable by naked eye） from a broad well-proportioned emission area of 50mm × 50mm. This kind of device can show various digits and words clearly. The lowest turn-on field below 1 V/m, the emission current density over 5.0±0.1 mA/cm^2, and the highest luminance 1.0 × 10^3 cd/m^2 are obtained. Meanwhile, the role of the laser spattering chiselling techniques in improving the field emission properties of the amorphous carbon film are explained.展开更多
This paper reports that bunchy flake-like nano-graphite crystallite films （BNGCFs） were deposited on Si substrates by using the microwave chemical vapour deposition technique. Furthermore the BNGCFs were characteriz...This paper reports that bunchy flake-like nano-graphite crystallite films （BNGCFs） were deposited on Si substrates by using the microwave chemical vapour deposition technique. Furthermore the BNGCFs were characterized by x-ray diffraction spectra, scanning electron microscopy, Raman spectra and field emission （FE） I-V measurements, and a lowest turn-on field of 1.5 V/μm, and a high average emission current density of 30 mA/cm2 at a macroscopic electric field of 8.0V/μm were obtained. The J-E data did not follow the original Fowler-Nordheim （F-N） relation since they were not well represented in the F-N plot by a straight line. A model considering the F-N mechanism, and the statistic effects of FE tip structures has been applied successfully to explain all the FE data observed for E 〈 8.SV/μm.展开更多
文摘Amorphous carbon films are deposited on the Mo film/ceramic substrates, which are pretreated by a laser spattering chiselling technique （2 line/mm）, by using the microwave chemical vapour deposition technique. The films are characterized by x-ray diffraction, Raman spectrum, optical microscopy, and scanning electron microscopy. The experimental result indicates that the laser spattering chiselling pretreated techniques can essentially improve the field emission uniformity and the emission site density of the amorphous carbon thin film devices so that its emission site density can reach the level of actual application （undistinguishable by naked eye） from a broad well-proportioned emission area of 50mm × 50mm. This kind of device can show various digits and words clearly. The lowest turn-on field below 1 V/m, the emission current density over 5.0±0.1 mA/cm^2, and the highest luminance 1.0 × 10^3 cd/m^2 are obtained. Meanwhile, the role of the laser spattering chiselling techniques in improving the field emission properties of the amorphous carbon film are explained.
基金supported by the Shanghai Education Committee of China(Grant No 07ZZ95)
文摘This paper reports that bunchy flake-like nano-graphite crystallite films （BNGCFs） were deposited on Si substrates by using the microwave chemical vapour deposition technique. Furthermore the BNGCFs were characterized by x-ray diffraction spectra, scanning electron microscopy, Raman spectra and field emission （FE） I-V measurements, and a lowest turn-on field of 1.5 V/μm, and a high average emission current density of 30 mA/cm2 at a macroscopic electric field of 8.0V/μm were obtained. The J-E data did not follow the original Fowler-Nordheim （F-N） relation since they were not well represented in the F-N plot by a straight line. A model considering the F-N mechanism, and the statistic effects of FE tip structures has been applied successfully to explain all the FE data observed for E 〈 8.SV/μm.
