Construction of in-plane p-n junction with clear interface by using homogenous materials is an important issue in two-dimensional transistors,which have great potential in the applications of next-generation integrate...Construction of in-plane p-n junction with clear interface by using homogenous materials is an important issue in two-dimensional transistors,which have great potential in the applications of next-generation integrated circuit and optoelectronic devices.Hence,a controlled and facile method to achieve p-n interface is desired.Molybdenum sulfide(MoS2)has shown promising potential as an atomic-layer ntype semiconductor in electronics and optoelectronics.Here,we developed a facile and reliable approach to in-situ transform n-type MoS2 into p-type MoO3 to form lateral p-n junction via a KI/I2 solution-based chemical oxidization process.The lateral MoS2/MoO3 p-n junction exhibits a highly efficient photoresponse and ideal rectifying behavior,with a maximum external quantum efficiency of^650%,~3.6 mA W-1 at 0 V,and a light switching ratio of^102.The importance of the built-in p-n junction with such a high performance is further confirmed by high-resolution photocurrent mapping.Due to the high photoresponse at low source-drain voltage(VDS)and gate voltage(VG),the formed MoS2/MoO3 junction p-n diode shows potential applications in low-power operating photodevices and logic circuits.Our findings highlight the prospects of the local transformation of carrier type for high-performance MoS2-based electronics,optoelectronics and CMOS logic circuits.展开更多
基金We gratefully acknowledge the financial support from the National Natural Science Foundation of China(51722503,51621004,21705036 and 21975067)the Natural Science Foundation of Hunan Province,China(2018JJ3035).
文摘Construction of in-plane p-n junction with clear interface by using homogenous materials is an important issue in two-dimensional transistors,which have great potential in the applications of next-generation integrated circuit and optoelectronic devices.Hence,a controlled and facile method to achieve p-n interface is desired.Molybdenum sulfide(MoS2)has shown promising potential as an atomic-layer ntype semiconductor in electronics and optoelectronics.Here,we developed a facile and reliable approach to in-situ transform n-type MoS2 into p-type MoO3 to form lateral p-n junction via a KI/I2 solution-based chemical oxidization process.The lateral MoS2/MoO3 p-n junction exhibits a highly efficient photoresponse and ideal rectifying behavior,with a maximum external quantum efficiency of^650%,~3.6 mA W-1 at 0 V,and a light switching ratio of^102.The importance of the built-in p-n junction with such a high performance is further confirmed by high-resolution photocurrent mapping.Due to the high photoresponse at low source-drain voltage(VDS)and gate voltage(VG),the formed MoS2/MoO3 junction p-n diode shows potential applications in low-power operating photodevices and logic circuits.Our findings highlight the prospects of the local transformation of carrier type for high-performance MoS2-based electronics,optoelectronics and CMOS logic circuits.
