A dual conduction paths segmented anode lateral insulated-gate bipolar transistor （DSA-LIGBT） which uses triple reduced surface field （RESURF） technology is proposed. Due to the hybrid structures of triple RESURF ...A dual conduction paths segmented anode lateral insulated-gate bipolar transistor （DSA-LIGBT） which uses triple reduced surface field （RESURF） technology is proposed. Due to the hybrid structures of triple RESURF LDMOS （T-LDMOS） and traditional LIGBT, firstly, a wide p-type anode is beneficial to the small shift voltage （VST） and low specific on-resistance （Ron,sp） when the anode voltage （VA） is larger than VST. Secondly, a wide n-type anode and triple RESURF technology are used to get a low Ron,sp when VA is less than VST. Meanwhile, it can accelerate the extraction of electrons, which brings a low turn-off time （Toff）. Experimental results show that： VST is only 0.9 V, Ron,sp （Ron × Area） are 11.7 and 3.6 Ω · mm^2 when anode voltage VA equals 0.9 and 3 V, respectively, the breakdown voltage reaches to 800 V and Toff is only 450 ns.展开更多
文摘文章基于通过控制mos管的栅极电压产生随着温度变化的补偿电流原理,采用0.5μm BCD30 V工艺,设计一款二阶温度补偿带隙基准电压源,仿真结果表明,电源电压等于7 V时,电路能够产生一个稳定的1.24 V输出电压,在﹣40~125℃内,最小温度系数为3.47×10-6/℃,最大温度系数为6.5×10-6/℃,输出电压偏差3 m V。在7 V电源电压下,100 k Hz频率下电源抑制比为65 d B。
基金supported by the National Natural Science Foundation of China(No.61376080)
文摘A dual conduction paths segmented anode lateral insulated-gate bipolar transistor （DSA-LIGBT） which uses triple reduced surface field （RESURF） technology is proposed. Due to the hybrid structures of triple RESURF LDMOS （T-LDMOS） and traditional LIGBT, firstly, a wide p-type anode is beneficial to the small shift voltage （VST） and low specific on-resistance （Ron,sp） when the anode voltage （VA） is larger than VST. Secondly, a wide n-type anode and triple RESURF technology are used to get a low Ron,sp when VA is less than VST. Meanwhile, it can accelerate the extraction of electrons, which brings a low turn-off time （Toff）. Experimental results show that： VST is only 0.9 V, Ron,sp （Ron × Area） are 11.7 and 3.6 Ω · mm^2 when anode voltage VA equals 0.9 and 3 V, respectively, the breakdown voltage reaches to 800 V and Toff is only 450 ns.
