Recently,many groups have focused on the development of GaN-based green LDs to meet the demand for laser display.Great progresses have been achieved in the past few years even that many challenges exist.In this articl...Recently,many groups have focused on the development of GaN-based green LDs to meet the demand for laser display.Great progresses have been achieved in the past few years even that many challenges exist.In this article,we analysis the challenges to develop GaN-based green LDs,and then the approaches to improve the green LD structure in the aspect of crystalline quality,electrical properties,and epitaxial layer structure are reviewed,especially the work we have done.展开更多
Absorption induced by activated magnesium(Mg)in a p-type layer contributes considerable optical internal loss in Ga Nbased laser diodes(LDs).An LD structure with a distributed polarization doping(DPD)p-cladding layer(...Absorption induced by activated magnesium(Mg)in a p-type layer contributes considerable optical internal loss in Ga Nbased laser diodes(LDs).An LD structure with a distributed polarization doping(DPD)p-cladding layer(CL)without intentional Mg doping was designed and fabricated.The influence of the anti-waveguide structure on optical confinement was studied by optical simulation.The threshold current density,slope efficiency of LDs with DPD p-CL,and Mg-doped CL,respectively,were compared.It was found that LDs with DPD p-CL showed lower threshold current density but reduced slope efficiency,which were caused by decreasing internal loss and hole injection,respectively.展开更多
基金Project supported by the National Key Research and Development Progress of China(Nos.2016YFB0401803,2016YFB0402002)the National Natural Science Foundation of China(Nos.61574160,61334005)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Science(No.XDA09020401)the Science and Technology Support Project of Jiangsu Province(No.BE2013007)
文摘Recently,many groups have focused on the development of GaN-based green LDs to meet the demand for laser display.Great progresses have been achieved in the past few years even that many challenges exist.In this article,we analysis the challenges to develop GaN-based green LDs,and then the approaches to improve the green LD structure in the aspect of crystalline quality,electrical properties,and epitaxial layer structure are reviewed,especially the work we have done.
基金supported by the National Natural Science Foundation of China(Nos.61834008,61574160,6180416461704184)+2 种基金National Key Research and Development Program of China(Nos.2017YFE0131500 and2017YFB0405000)Natural Science Foundation of Jiangsu Province(No.BK20180254)China Postdoctoral Science Foundation(No.2018M630619)。
文摘Absorption induced by activated magnesium(Mg)in a p-type layer contributes considerable optical internal loss in Ga Nbased laser diodes(LDs).An LD structure with a distributed polarization doping(DPD)p-cladding layer(CL)without intentional Mg doping was designed and fabricated.The influence of the anti-waveguide structure on optical confinement was studied by optical simulation.The threshold current density,slope efficiency of LDs with DPD p-CL,and Mg-doped CL,respectively,were compared.It was found that LDs with DPD p-CL showed lower threshold current density but reduced slope efficiency,which were caused by decreasing internal loss and hole injection,respectively.
