Using photoreflectance(PR)at room temperature,we have studied GaAs/AlGaAs multi-quantum wells(MQWs)grown by molecular beam epitaxy.Analysis shows that the modulation mechanism of PR of MQWs is Stark shift of the subba...Using photoreflectance(PR)at room temperature,we have studied GaAs/AlGaAs multi-quantum wells(MQWs)grown by molecular beam epitaxy.Analysis shows that the modulation mechanism of PR of MQWs is Stark shift of the subbands produced by photo-injection of carriers,which has first derivative functional lineshapes.By fitting the experimental spectra,an unusual transition coming from the interfaces in MQWs was observed.展开更多
文摘Using photoreflectance(PR)at room temperature,we have studied GaAs/AlGaAs multi-quantum wells(MQWs)grown by molecular beam epitaxy.Analysis shows that the modulation mechanism of PR of MQWs is Stark shift of the subbands produced by photo-injection of carriers,which has first derivative functional lineshapes.By fitting the experimental spectra,an unusual transition coming from the interfaces in MQWs was observed.