This paper presents a high linearity downconverter implemented in a 0.18μm CMOS process for long term evolution（LTE） receivers without a surface acoustic wave（SAW） filter.The proposed downconverter is composed of...This paper presents a high linearity downconverter implemented in a 0.18μm CMOS process for long term evolution（LTE） receivers without a surface acoustic wave（SAW） filter.The proposed downconverter is composed of a transconductance（Gm） stage,a passive mixer,a current buffer,a transimpedance（TIA） stage,and a DC-offset cancellation（DCOC） loop.The current buffer is utilized to provide very low load impedance for the passive mixer at high frequencies and reduce the output voltage swing induced by out-of-band blockers.This technique improves the input referred third-order intercept point（IIP3） and second-order intercept point（IIP2） of the down-converter by 4.5 dB and 11 dB,respectively.The measured results show that the proposed downconverter achieves a voltage conversion gain of 29.5 dB,double sideband noise figure of 12.7 dB,out-of-band IIP3 of 13 dBm and IIP2 of more than 62 dBm.展开更多
基金supported by the National High Technology Research and Development Program of China(No.2009AA011608)the National Major Science and Technology Projects Program of China(No.2009ZX03002-004-02)
文摘This paper presents a high linearity downconverter implemented in a 0.18μm CMOS process for long term evolution（LTE） receivers without a surface acoustic wave（SAW） filter.The proposed downconverter is composed of a transconductance（Gm） stage,a passive mixer,a current buffer,a transimpedance（TIA） stage,and a DC-offset cancellation（DCOC） loop.The current buffer is utilized to provide very low load impedance for the passive mixer at high frequencies and reduce the output voltage swing induced by out-of-band blockers.This technique improves the input referred third-order intercept point（IIP3） and second-order intercept point（IIP2） of the down-converter by 4.5 dB and 11 dB,respectively.The measured results show that the proposed downconverter achieves a voltage conversion gain of 29.5 dB,double sideband noise figure of 12.7 dB,out-of-band IIP3 of 13 dBm and IIP2 of more than 62 dBm.
