Polycrystalline Ge1-xSnx（poly-Ge1-xSnx） alloy thin films with high Sn content（〉 10%） were fabricated by cosputtering amorphous GeSna-GeSn on Ge100 wafers and subsequently pulsed laser annealing with laser energy ...Polycrystalline Ge1-xSnx（poly-Ge1-xSnx） alloy thin films with high Sn content（〉 10%） were fabricated by cosputtering amorphous GeSna-GeSn on Ge100 wafers and subsequently pulsed laser annealing with laser energy density in the range of 250 mJ/cm^2 to 550 mJ/cm^2. High quality poly-crystal Ge0.90 Sn0.10 and Ge0.82 Sn0.18 films with average grain sizes of 94 nm and 54 nm were obtained, respectively. Sn segregation at the grain boundaries makes Sn content in the poly-GeSn alloys slightly less than that in the corresponding primary a-GeSn. The crystalline grain size is reduced with the increase of the laser energy density or higher Sn content in the primary a-GeSn films due to the booming of nucleation numbers. The Raman peak shift of Ge-Ge mode in the poly crystalline GeSn can be attributed to Sn substitution, strain,and disorder. The dependence of Raman peak shift of the Ge-Ge mode caused by strain and disorder in GeSn films on full-width at half-maximum（FWHM） is well quantified by a linear relationship, which provides an effective method to evaluate the quality of poly-Ge1-xSnx by Raman spectra.展开更多
High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a...High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm^2at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61474094)the National Basic Research Program of China(Grant No.2013CB632103)
文摘Polycrystalline Ge1-xSnx（poly-Ge1-xSnx） alloy thin films with high Sn content（〉 10%） were fabricated by cosputtering amorphous GeSna-GeSn on Ge100 wafers and subsequently pulsed laser annealing with laser energy density in the range of 250 mJ/cm^2 to 550 mJ/cm^2. High quality poly-crystal Ge0.90 Sn0.10 and Ge0.82 Sn0.18 films with average grain sizes of 94 nm and 54 nm were obtained, respectively. Sn segregation at the grain boundaries makes Sn content in the poly-GeSn alloys slightly less than that in the corresponding primary a-GeSn. The crystalline grain size is reduced with the increase of the laser energy density or higher Sn content in the primary a-GeSn films due to the booming of nucleation numbers. The Raman peak shift of Ge-Ge mode in the poly crystalline GeSn can be attributed to Sn substitution, strain,and disorder. The dependence of Raman peak shift of the Ge-Ge mode caused by strain and disorder in GeSn films on full-width at half-maximum（FWHM） is well quantified by a linear relationship, which provides an effective method to evaluate the quality of poly-Ge1-xSnx by Raman spectra.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176092 and 61474094)the National Natural Science Foundation of China–National Research Foundation of Korea Joint Research Project(Grant No.11311140251)the National Basic Research Program of China(Grant Nos.2012CB933503 and 2013CB632103)
文摘High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm^2at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.
