Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs

The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer.

基于纸基微流控芯片的手持式食品添加剂检测仪

食品安全越来越成为人们关注的重点,某些企业存在滥用或过量使用食品添加剂的行为。本研究以纸基微流控芯片为核心技术,从纸基微流控芯片的设计及制作、材料的选择、检测性能及稳定性等方面进行研究,在手持式检测仪上基于超低成本的纸基微流控芯片完成食品添加剂现场即时检测。具有快速、便携、检测限低的优势,具有较强竞争力、广阔的市场前景和良好的社会效应。