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碳纤维导电发热织物的开发及性能评价
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作者 沈宇皓 彭佳佳 《辽宁丝绸》 2024年第1期35-36,40,共3页
对碳纤维的导电发热性能进行探索,利用碳纤维和棉纤维试织了不同比例的碳/棉纤维导电发热布样,并对碳纤维布样的电阻、升温速率、降温速率等电热性能进行了测试。
关键词 碳纤维 导电发热织物 电阻 电热性能
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可用作量子比特的一种负价态V_(Si)O_N缺陷中心(英文)
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作者 沈宇皓 唐政 彭伟 《华东师范大学学报(自然科学版)》 CAS CSCD 北大核心 2017年第2期97-106,共10页
γ相Si_3N_4是一种超硬氮基化合陶瓷材料,在其尖晶石结构中硅原子分别占据四面体于八面体配位格点.基于第一性原理计算,研究了这种材料之中一种氧空位复合体V_(Si)O_N缺陷中心的不同价态下自旋极化的电子结构以及能量稳定性,其中该缺陷... γ相Si_3N_4是一种超硬氮基化合陶瓷材料,在其尖晶石结构中硅原子分别占据四面体于八面体配位格点.基于第一性原理计算,研究了这种材料之中一种氧空位复合体V_(Si)O_N缺陷中心的不同价态下自旋极化的电子结构以及能量稳定性,其中该缺陷中心由四面体配位的硅空位复合紧邻替位氧原子而成.发现负一价态的该缺陷中心V_(Si)O_N^(-1)在p型主体材料中是较为稳定的存在,并满足净自旋S=1的基态三重态,以及低激发能量的自旋守恒跃迁.通过平均场近似,将其在绝对零度下的自旋相干寿命估计为0.4 s,室温下可达毫秒量级.因此理论上表明了V_(Si)O_N^(-1)缺陷中心是可用作量子比特的相干操控的潜在候选者. 展开更多
关键词 第一性原理计算 自旋极化电子结构 自旋相干时间 色心的量子比特操控
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Exotic Dielectric Behaviors Induced by Pseudo-Spin Texture in Magnetic Twisted Bilayer
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作者 沈宇皓 童文旖 +2 位作者 胡鹤 郑君鼎 段纯刚 《Chinese Physics Letters》 SCIE CAS CSCD 2021年第3期101-106,共6页
Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30° twisted bilayer honeycomb lattice system, which possesses an incommensurate ... Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30° twisted bilayer honeycomb lattice system, which possesses an incommensurate moiré pattern,and uncommon electronic behaviors may appear due to the absence of phase coherence. Such a system is extremely sensitive to further twist and many intriguing phenomena will occur. Based on first-principles calculations we show that, for further twist near 30°, there could induce dramatically different dielectric behaviors of electron between left and right-twisted cases. Specifically, it is found that the left and right twists show suppressed and amplified dielectric response under vertical electric field, respectively. Further analysis demonstrate that such an exotic dielectric property can be attributed to the stacking dependent charge redistribution due to twist,which forms twist-dependent pseudospin textures. We will show that such pseudospin textures are robust under small electric field. As a result, for the right-twisted case, there is almost no electric dipole formation exceeding the monolayer thickness when the electric field is applied. Whereas for the left case, the system could even demonstrate negative susceptibility, i.e., the induced polarization is opposite to the applied field, which is very rare in the nature. Such findings not only enrich our understanding on moiré systems but also open an appealing route toward functional 2D materials design for electronic, optical and even energy storage devices. 展开更多
关键词 TWIST TWISTED DIELECTRIC
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Ferroelectric Controlled Spin Texture in Two-Dimensional NbOI_(2)Monolayer
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作者 叶倩 沈宇皓 段纯刚 《Chinese Physics Letters》 SCIE CAS CSCD 2021年第8期126-130,共5页
The persistent spin helix(PSH)system is considered to have promising applications in energy-conservation spintronics because it supports an extraordinarily long spin lifetime of carriers.Here,we predict that the exist... The persistent spin helix(PSH)system is considered to have promising applications in energy-conservation spintronics because it supports an extraordinarily long spin lifetime of carriers.Here,we predict that the existence of PSH state in two-dimensional(2 D)ferroelectric NbOI_(2)monolayers.Our first-principles calculation results show that there exists Dresselhaus-type spin-orbit coupling(SOC)band splitting near the conduction-band minimum(CBM)of the NbOI_(2)monolayer.It is revealed that the spin splitting near CBM merely refers to out-of-plane spin configuration in the wave vector space,which gives rise to a long-lived PSH state that can be controlled by reversible ferroelectric polarization.We believe that the coupling characteristics of ferroelectric polarization and spin texture in NbOI_(2)provide a platform for the realization of fully electric controlled spintronic devices. 展开更多
关键词 FERROELECTRIC SPLITTING realization
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单轴应变对Sb_(2)Se_(3)空穴迁移率的影响
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作者 张冷 沈宇皓 +4 位作者 汤朝阳 吴孔平 张鹏展 刘飞 侯纪伟 《物理学报》 SCIE EI CAS 2024年第11期280-287,共8页
硒化锑(Sb_(2)Se_(3))是一种物相简单、元素丰富、经济友好的太阳电池吸收层材料,具有广阔的应用前景.然而,Sb_(2)Se_(3)较弱的导电性成为了限制电池器件性能的重要因素.迁移率是材料与器件的重要电学参数,应变可以改变载流子迁移率,因... 硒化锑(Sb_(2)Se_(3))是一种物相简单、元素丰富、经济友好的太阳电池吸收层材料,具有广阔的应用前景.然而,Sb_(2)Se_(3)较弱的导电性成为了限制电池器件性能的重要因素.迁移率是材料与器件的重要电学参数,应变可以改变载流子迁移率,因此,研究应变对Sb_(2)Se_(3)的载流子迁移率特性影响具有实际意义.本文通过密度泛函理论和形变势理论,系统研究了单轴应变对Sb_(2)Se_(3)能带结构、禁带宽度、等能面、有效质量的影响,分析了沿着x,y,z方向的三种单轴应变对载流子沿着x,y,z方向的迁移率μx,μy,μz的影响.研究发现,对于无应变的Sb_(2)Se_(3),μx远大于μy和μz,实验上应该将x方向作为Sb_(2)Se_(3)的特定生长方向(即内建电场方向).综合应变对带隙、等能面、分态密度及迁移率的影响,本研究认为当应变沿着y轴方向,且压应变为3%的时候,能获得最佳性能的Sb_(2)Se_(3)太阳电池吸收层材料. 展开更多
关键词 Sb_(2)Se_(3) 迁移率 形变势 应变工程
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