SOI (Silicon on Insulator) is an ideal material for developing high speed complementary metal-oxide-semiconductor and three dimensional large scale integrated circuits. SOI prepared by melt regrowth methods with laser...SOI (Silicon on Insulator) is an ideal material for developing high speed complementary metal-oxide-semiconductor and three dimensional large scale integrated circuits. SOI prepared by melt regrowth methods with laser beams, electron beams and moving graphite strip heaters has good quality and is suitable for展开更多
We have studied the doping properties of boron in a-Si:H films prepared with glow discharge technique.In this paper we will explain our work in the following three sections.
Ⅰ. INTRODUCTION Recently, the crystallization of amorphous silicon films has been reported in some literatures. The thermodynamic phase of amorphous semiconductors is unstable, therefore after a series of technologic...Ⅰ. INTRODUCTION Recently, the crystallization of amorphous silicon films has been reported in some literatures. The thermodynamic phase of amorphous semiconductors is unstable, therefore after a series of technological processing (such as annealing, doping or illumination of laser) a certain amount of microcrystal and polycrystals will come into existence展开更多
文摘SOI (Silicon on Insulator) is an ideal material for developing high speed complementary metal-oxide-semiconductor and three dimensional large scale integrated circuits. SOI prepared by melt regrowth methods with laser beams, electron beams and moving graphite strip heaters has good quality and is suitable for
文摘We have studied the doping properties of boron in a-Si:H films prepared with glow discharge technique.In this paper we will explain our work in the following three sections.
文摘Ⅰ. INTRODUCTION Recently, the crystallization of amorphous silicon films has been reported in some literatures. The thermodynamic phase of amorphous semiconductors is unstable, therefore after a series of technological processing (such as annealing, doping or illumination of laser) a certain amount of microcrystal and polycrystals will come into existence
