Sub-wavelength structures(SWS) were prepared on Ge substrates through photolithography and reactive ion etching(RIE) technology for broadband antireflective purposes in the long wave infrared(LWIR) waveband of 8-12 μ...Sub-wavelength structures(SWS) were prepared on Ge substrates through photolithography and reactive ion etching(RIE) technology for broadband antireflective purposes in the long wave infrared(LWIR) waveband of 8-12 μm.Topography of the etched patterns was observed using high resolution optical microscope and atomic force microscope(AFM).Infrared transmission performance of the SWS was investigated by Fourier transform infrared(FTIR) spectrometer.Results show that the etched patterns were of high uniformity ...展开更多
基金supported by the basic research foundation of Northwestern polytechnical University
文摘Sub-wavelength structures(SWS) were prepared on Ge substrates through photolithography and reactive ion etching(RIE) technology for broadband antireflective purposes in the long wave infrared(LWIR) waveband of 8-12 μm.Topography of the etched patterns was observed using high resolution optical microscope and atomic force microscope(AFM).Infrared transmission performance of the SWS was investigated by Fourier transform infrared(FTIR) spectrometer.Results show that the etched patterns were of high uniformity ...