A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can...A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can increase by 57% and 70% respectively;transconductance is flatter;I-V curves take no sign of kink in the saturation region;the device temperature is much lower even at high input power;the floating body effect and the self-heating effect are distinctly suppressed.Furthermore,the advantage of low leakage current and low output capacitance in SOI structures does not degrade.The proposed structure will be a promising choice to improve the performance and reliability of SOI power device.展开更多
文摘A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can increase by 57% and 70% respectively;transconductance is flatter;I-V curves take no sign of kink in the saturation region;the device temperature is much lower even at high input power;the floating body effect and the self-heating effect are distinctly suppressed.Furthermore,the advantage of low leakage current and low output capacitance in SOI structures does not degrade.The proposed structure will be a promising choice to improve the performance and reliability of SOI power device.
