A 680 V LDMOS on a thin SOI with an improved field oxide（FOX） and dual field plate was studied experimentally.The FOX structure was formed by an ＂oxidation-etch-oxidation＂ process,which took much less time to form...A 680 V LDMOS on a thin SOI with an improved field oxide（FOX） and dual field plate was studied experimentally.The FOX structure was formed by an ＂oxidation-etch-oxidation＂ process,which took much less time to form,and had a low protrusion profile.A polysilicon field plate extended to the FOX and a long metal field plate was used to improve the specific on-resistance.An optimized drift region implant for linear-gradient doping was adopted to achieve a uniform lateral electric field.Using a SimBond SOI wafer with a 1.5μm top silicon and a 3μm buried oxide layer,CMOS compatible SOI LDMOS processes are designed and implemented successfully. The off-state breakdown voltage reached 680 V,and the specific on-resistance was 8.2Ω·mm^2.展开更多
基金National Natural Science Foundation of China (50402026)Science Technology Foundation of Zhejiang Province in China (2008C31002)National Science Foundation of Shanghai (09ZR1437700)
文摘研究了阻挡层 Al2O3对应变 SiGe 上 HfO2薄膜的热稳定性和电学可靠性的影响。高分辨透射电镜(HRTEM)像表明,阻挡层使HfO2在 700 ℃温度下退火后仍然是非晶的。散能 X 射线谱(EDS)分析表明,阻挡层抑制了 Si 原子在 HfO2薄膜中的扩散。X 射线光电子谱(XPS)测试表明,阻挡层抑制了界面处 HfSiO 和 GeOx的生长。电学测试分析说明,带有阻挡层的 MIS 电容的电学性能得到提高,包括60Co γ射线辐射后较高的电容密度、较低的缺陷密度、以及较小的平带电压漂移。
基金Project supported by the National Natural Science Foundation of China(Nos.11175229,61006088)
文摘A 680 V LDMOS on a thin SOI with an improved field oxide（FOX） and dual field plate was studied experimentally.The FOX structure was formed by an ＂oxidation-etch-oxidation＂ process,which took much less time to form,and had a low protrusion profile.A polysilicon field plate extended to the FOX and a long metal field plate was used to improve the specific on-resistance.An optimized drift region implant for linear-gradient doping was adopted to achieve a uniform lateral electric field.Using a SimBond SOI wafer with a 1.5μm top silicon and a 3μm buried oxide layer,CMOS compatible SOI LDMOS processes are designed and implemented successfully. The off-state breakdown voltage reached 680 V,and the specific on-resistance was 8.2Ω·mm^2.
