Optoelectronic properties of MoSe2 are modulated by controlled annealing in air.Characterizations by Raman spectroscopy and XPS demonstrate the introduction of oxygen defects.Considerable increase in electron and hole...Optoelectronic properties of MoSe2 are modulated by controlled annealing in air.Characterizations by Raman spectroscopy and XPS demonstrate the introduction of oxygen defects.Considerable increase in electron and hole mobilities reveals the highly improved electron and hole transport.Furthermore,the photocurrent is enhanced by nearly four orders of magnitudes under 7 nW laser exposure after annealing.The remarkable enhancement in the photoresponse is attributed to an increase in hole trapping centers and a reduction in resistance.Furthermore,the annealed photodetector shows a fast time response on the order of 10 ms and responsivity of 3×10^(4) A/W.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61904043)the Natural Science Foundation of Zhejiang Province,China(Grant No.LQ19A040009).
文摘Optoelectronic properties of MoSe2 are modulated by controlled annealing in air.Characterizations by Raman spectroscopy and XPS demonstrate the introduction of oxygen defects.Considerable increase in electron and hole mobilities reveals the highly improved electron and hole transport.Furthermore,the photocurrent is enhanced by nearly four orders of magnitudes under 7 nW laser exposure after annealing.The remarkable enhancement in the photoresponse is attributed to an increase in hole trapping centers and a reduction in resistance.Furthermore,the annealed photodetector shows a fast time response on the order of 10 ms and responsivity of 3×10^(4) A/W.
