期刊文献+
共找到5篇文章
< 1 >
每页显示 20 50 100
High responsivity photodetectors based on graphene/WSe_(2) heterostructure by photogating effect 被引量:1
1
作者 李淑萍 雷挺 +5 位作者 严仲兴 王燕 张黎可 涂华垚 时文华 曾中明 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第1期728-733,共6页
Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency a... Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices. 展开更多
关键词 WSe_(2) HETEROSTRUCTURE PHOTODETECTOR photogating effect
下载PDF
Spin torque oscillator based on magnetic tunnel junction with MgO cap layer for radio-frequency-oriented neuromorphic computing
2
作者 涂华垚 雒雁翔 +4 位作者 曾柯心 吴宇轩 张黎可 张宝顺 曾中明 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第10期656-659,共4页
Recently,it has been proposed that spin torque oscillators(STOs)and spin torque diodes could be used as artificial neurons and synapses to directly process microwave signals,which could lower latency and power consump... Recently,it has been proposed that spin torque oscillators(STOs)and spin torque diodes could be used as artificial neurons and synapses to directly process microwave signals,which could lower latency and power consumption greatly.However,one critical challenge is to make the microwave emission frequency of the STO stay constant with a varying input current.In this work,we study the microwave emission characteristics of STOs based on magnetic tunnel junction with MgO cap layer.By applying a small magnetic field,we realize the invariability of the microwave emission frequency of the STO,making it qualified to act as artificial neuron.Furthermore,we have simulated an artificial neural network using STO neuron to recognize the handwritten digits in the Mixed National Institute of Standards and Technology database,and obtained a high accuracy of 92.28%.Our work paves the way for the development of radio-frequency-oriented neuromorphic computing systems. 展开更多
关键词 spin torque oscillators artificial neuron neuromorphic computing magnetic tunnel junctions
下载PDF
Ultra-high photoresponsive photodetector based on ReS_(2)/SnS_(2)heterostructure
3
作者 王冰辉 邢艳辉 +7 位作者 董晟园 李嘉豪 韩军 涂华垚 雷挺 贺雯馨 张宝顺 曾中明 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第9期545-551,共7页
Photodetectors based on two-dimensional materials have attracted much attention because of their unique structure and outstanding performance.The response speed of single ReS_(2)photodetector is slow exceptionally,the... Photodetectors based on two-dimensional materials have attracted much attention because of their unique structure and outstanding performance.The response speed of single ReS_(2)photodetector is slow exceptionally,the heterostructure could improves the response speed of ReS_(2)-based photodetector,but the photodetectors responsivity is reduced greatly,which restricts the development of ReS_(2).In this paper,a vertically structured ReS_(2)/SnS_(2)van der Waals heterostructure photodetectors is prepared,using ReS_(2)as the transport layer and SnS_(2)as the light absorbing layer to regulate the channel current.The device has an ultra-high photoconductive gain of 10^(10),which exhibits an ultra-high responsivity of4706 A/W under 365-nm illumination and response speed in seconds,and has an ultra-high external quantum efficiency of1.602×10^(6)%and a high detectivity of 5.29×10^(12)jones.The study for ReS_(2)-based photodetector displays great potential for developing future optoelectronic devices. 展开更多
关键词 two-dimensional material ReS_(2) HETEROSTRUCTURE PHOTODETECTOR
下载PDF
HgCdTe反型层中自旋轨道耦合、塞曼效应及界面粗糙涨落效应研究
4
作者 涂华垚 吕蒙 +5 位作者 张松然 俞国林 孙艳 康亭亭 陈鑫 戴宁 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2020年第6期684-689,共6页
通过实验测量,研究了HgCdTe反型层中自旋轨道耦合、塞曼效应及界面粗糙涨落效应。采用理论模型对不同温度及不同平行磁场下的反弱局域效应进行分析,结果表明,在平行磁场中,界面粗糙涨落效应与塞曼效应均会对HgCdTe反型层的反弱局域效应... 通过实验测量,研究了HgCdTe反型层中自旋轨道耦合、塞曼效应及界面粗糙涨落效应。采用理论模型对不同温度及不同平行磁场下的反弱局域效应进行分析,结果表明,在平行磁场中,界面粗糙涨落效应与塞曼效应均会对HgCdTe反型层的反弱局域效应产生抑制作用。其中,界面粗糙涨落效应表现为产生一个二维电子气法向的弱局域效应,对样品施加平行磁场会首先抑制界面粗糙涨落效应导致的法向弱局域效应,然后才以塞曼效应继续抑制反弱局域效应。通过对参数τ/τϕ与|m^*rg^*3|的分析表明,塞曼效应对反弱局域效应的抑制与温度无关。 展开更多
关键词 碲镉汞 自旋轨道耦合 塞曼效应 界面粗糙涨落效应
下载PDF
HgCdTe薄膜的输运特性及其应力调控
5
作者 张松然 何代华 +5 位作者 涂华垚 孙艳 康亭亭 戴宁 褚君浩 俞国林 《物理学报》 SCIE EI CAS CSCD 北大核心 2020年第5期196-201,共6页
窄禁带直接带隙半导体材料碲镉汞(Hg1–xCdxTe)是一种在红外探测与自旋轨道耦合效应基础研究方面都具有重要应用意义的材料.本文对单晶生长的体材料Hg0.851Cd0.149Te进行阳极氧化以形成表面反型层,将样品粘贴在压电陶瓷上减薄后进行磁... 窄禁带直接带隙半导体材料碲镉汞(Hg1–xCdxTe)是一种在红外探测与自旋轨道耦合效应基础研究方面都具有重要应用意义的材料.本文对单晶生长的体材料Hg0.851Cd0.149Te进行阳极氧化以形成表面反型层,将样品粘贴在压电陶瓷上减薄后进行磁输运测试,在压电陶瓷未加电压时观察到了明显的SdH振荡效应.对填充因子与磁场倒数进行线性拟合,获得样品反型层二维电子气的载流子浓度为ns=1.25×10^16m^-2.在不同磁场下,利用压电陶瓷对样品进行应力调控,观测到具有不同特征的现象,分析应是样品中存在二维电子气与体材料两个导电通道.零磁场下体材料主导的电阻的变化应来源于应力导致的带隙的改变;而高场下产生类振荡现象的原因应为应力导致的二维电子气能级的分裂. 展开更多
关键词 HGCDTE Shubnikov-de Haas振荡 压电陶瓷 应力调控
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部