The AgTCNQ thin-film was prepared by vacuum vapor co-deposition and characterized by infrared spectral analysis,and then a uniform AgTCNQ （TCNQ-- 7,7,8,8-tetracyanoquinodimethane） thin-film layer was sandwiched in a...The AgTCNQ thin-film was prepared by vacuum vapor co-deposition and characterized by infrared spectral analysis,and then a uniform AgTCNQ （TCNQ-- 7,7,8,8-tetracyanoquinodimethane） thin-film layer was sandwiched in a Ti/AgTCNQ/Ati crossbar structure array as organic bistable devices （OBD）.A reversible and reproducible memory switching property,caused by intermolecular charge transfer （CT） in the AgTCNQ thin-film, was observed in the organic bista- ble devices. The positive threshold voltage from the high impedance state to the low impedance was about 3.8-5V, with the reverse phenomenon occurring at a negative voltage of - 3.5- - 4. 4V,lower than that with a CuTCNQ active layer. The crossbar array of OBDs with AgTCNQ is promising for nonvolatile organic memory applications.展开更多
This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writin...This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm.展开更多
A one-time programmable metal-molecule-metal device, with a modified Rotaxane LB film as the functional layer, is proposed for potential use in organic programmable and fault tolerant circuits like inorganic anti-fuse...A one-time programmable metal-molecule-metal device, with a modified Rotaxane LB film as the functional layer, is proposed for potential use in organic programmable and fault tolerant circuits like inorganic anti-fuse devices used in field programmable gate arrays. All fabrication methods involved are low temperature processes, ensuring that this device can be integrated with other organic devices. Electrical measurements show that this device has a good one-time programming capability. Its break down voltage is 2.2V, off-state resistance is 15kΩ, and on-state resistance is 54Ω These characteristics come from the penetration of metal atoms into molecular film under high electronic field.展开更多
To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, C...To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, CuPc was deposited above the pentacene and served as a protecting layer for the active layer. Due to the same electrical characteristics but different morphologies, the bilayer structure was effective in decreasing the contamination of impurities and gas, and then improved the device stability in air.展开更多
文摘The AgTCNQ thin-film was prepared by vacuum vapor co-deposition and characterized by infrared spectral analysis,and then a uniform AgTCNQ （TCNQ-- 7,7,8,8-tetracyanoquinodimethane） thin-film layer was sandwiched in a Ti/AgTCNQ/Ati crossbar structure array as organic bistable devices （OBD）.A reversible and reproducible memory switching property,caused by intermolecular charge transfer （CT） in the AgTCNQ thin-film, was observed in the organic bista- ble devices. The positive threshold voltage from the high impedance state to the low impedance was about 3.8-5V, with the reverse phenomenon occurring at a negative voltage of - 3.5- - 4. 4V,lower than that with a CuTCNQ active layer. The crossbar array of OBDs with AgTCNQ is promising for nonvolatile organic memory applications.
基金Project supported by the State Key Development Program for Basic Research of China (Grant No. 2006CB806204)National Natural Science Foundation of China (Grant Nos. 60825403,90607022,60676001 and 60676008)Synchrotron Radiation Fund of Innovation Project of Ministry of Education of China (Grant No. 20070156S)
文摘This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm.
文摘A one-time programmable metal-molecule-metal device, with a modified Rotaxane LB film as the functional layer, is proposed for potential use in organic programmable and fault tolerant circuits like inorganic anti-fuse devices used in field programmable gate arrays. All fabrication methods involved are low temperature processes, ensuring that this device can be integrated with other organic devices. Electrical measurements show that this device has a good one-time programming capability. Its break down voltage is 2.2V, off-state resistance is 15kΩ, and on-state resistance is 54Ω These characteristics come from the penetration of metal atoms into molecular film under high electronic field.
基金Project supported by the State Key Development Program for Basic Research of China(No.2006CB806204)the National Natural Science Foundation of China(Nos.60676001,60676008)
文摘To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, CuPc was deposited above the pentacene and served as a protecting layer for the active layer. Due to the same electrical characteristics but different morphologies, the bilayer structure was effective in decreasing the contamination of impurities and gas, and then improved the device stability in air.
