Growth interface of CdMnTe crystal by traveling heater method

The growth interfaces of CdMnTe（CMT） crystals grown by traveling heater method（THM） were studied. Two types of polycrystalline CMT feed ingots synthesized in a traditional rocking furnace and vertical Bridgman（VB） furnace were adopted in THM growth, and the effects of the polycrystalline feed on the growth interface were revealed. The morphology of the growth interface of CMT crystal（CMT2） grown from the feed by vertical Bridgman was smoother with lower curvature compared with that of CMT crystal（CMT1） from the feed by rocking furnace. The radial Mn composition and Te inclusion distribution of the CMT wafers were analyzed and correlated to the growth interface. The Mn segregation along the radial direction and Te inclusion density of CMT2 were lower than those of CMT1. The VB method synthesized polycrystalline feed could improve the growth interface morphology, which is beneficial for decreasing the Te inclusions and Mn segregation in CMT wafers.

溶剂熔区移动法生长Cd_(0.9)Zn_(0.1)Te晶体的工艺优化研究

为了解决Cd_(0.9)Zn_(0.1)Te(CZT)晶体生长温度高、单晶率低、成分不均匀等问题,采用溶剂熔区移动法(THM)在优化工艺参数下生长了掺In的CZT晶体,在优化晶体的生长温度、固液界面处的温度梯度、原位退火过程等生长条件后,生长出直径为45 mm的低Te夹杂浓度、高电阻率、高透过率、均匀的高质量CZT晶体。X射线衍射结果显示,晶体的结晶性较好、Zn成分轴向偏析小。红外透过光谱测试结果显示,晶体内部的杂质、缺陷水平相对较少,晶体整体的红外透过率在60%左右。紫外-可见光吸收光谱测试结果也进一步表明,晶体的均匀性良好。采用红外显微镜对晶体内部的Te夹杂形貌及其尺寸进行观察,结果表明Te夹杂的尺寸主要分布在0~10μm之间。采用直流稳态光电导技术测得电子的迁移率寿命积约为8×10^(-4) cm^2/V。

电气工程及其自动化的发展趋势探析

电气工程自动化技术已逐渐成为当今社会发展的重要技术力量,也是推动社会发展和生产力提高的关键技术。目前,电气工程及其自动化在我国社会生产生活中的应用有了广泛的发展,但在具体应用过程中仍存在问题和不足。因此,分析电气工程及其自动化的应用和发展趋势具有重要的现实意义。