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角度非均匀材料平面V形切口应力奇性分析
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作者 王静平 姜伟 +3 位作者 李俊萍 潘家雨 尚悦 葛仁余 《计算力学学报》 CAS CSCD 北大核心 2023年第2期264-272,共9页
提出了一种确定角度非均匀材料平面V形切口尖端应力奇性指数的有效方法。首先,在弹性力学基本方程中引入V形切口尖端位移场的级数渐近展开,建立以位移为特征函数的变系数和非线性微分方程组。然后,采用微分求积法(DQM)求解微分方程组,... 提出了一种确定角度非均匀材料平面V形切口尖端应力奇性指数的有效方法。首先,在弹性力学基本方程中引入V形切口尖端位移场的级数渐近展开,建立以位移为特征函数的变系数和非线性微分方程组。然后,采用微分求积法(DQM)求解微分方程组,可得到多阶应力奇性指数及其相对应的特征函数,该法具有公式简单、编程方便、计算量少和精度高等优点,可处理任意开口角度和任意材料组合的V形切口。典型算例验证了微分求积法的有效性和精确性。 展开更多
关键词 V形切口 角度非均匀材料 应力奇性 微分求积法
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角度非均匀连续介质材料反平面V形切口应力奇性分析
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作者 姜伟 葛仁余 +2 位作者 李浚淇 潘家雨 尚悦 《安徽工程大学学报》 CAS 2023年第4期56-63,共8页
由于角度非均匀连续介质材料本构关系的复杂性,即材料参数随角度坐标连续变化,致使V形切口的奇性特征分析的控制方程是一组非线性、变系数的常微分方程组,数学上面临求解的困难。论文运用微分求积法(DQM)计算角度非均匀连续介质材料反平... 由于角度非均匀连续介质材料本构关系的复杂性,即材料参数随角度坐标连续变化,致使V形切口的奇性特征分析的控制方程是一组非线性、变系数的常微分方程组,数学上面临求解的困难。论文运用微分求积法(DQM)计算角度非均匀连续介质材料反平面V形切口端部应力奇性指数,首先基于弹性力学理论,将切口端部应力奇性指数的计算转化为常微分方程组的特征值问题,再由DQM理论将常微分方程组的特征值问题转化为一组标准型广义代数方程的特征值问题,最后正交三角分解(QR)法可一次性计算出角度非均匀连续介质材料反平面V形切口端部应力奇性指数及其特征角函数。数值计算结果表明,DQM计算值与已有文献计算结果完全一致,证明了DQM分析角度非均匀连续介质材料反平面V形切口应力奇性的可行性和精确性。 展开更多
关键词 反平面V形切口 非均匀连续介质材料 应力奇异性 微分求积法
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Large-area atomic-smooth polyvinylidene fluoride Langmuir-Blodgett film exhibiting significantly improved ferroelectric and piezoelectric responses 被引量:3
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作者 Shan He Mengfan Guo +8 位作者 Zhenkang Dan Shun Lan Weibin Ren Le Zhou Yue Wang Yuhan Liang Yunpeng Zheng Jiayu Pan Yang Shen 《Science Bulletin》 SCIE EI CSCD 2021年第11期1080-1090,M0003,共12页
Large roughness and structure disorder in ferroelectric ultrathin Langmuir-Blodgett(LB)film results in severe space scatter in electrical,ferroelectric and piezoelectric characteristics,thus limiting the nanoscale res... Large roughness and structure disorder in ferroelectric ultrathin Langmuir-Blodgett(LB)film results in severe space scatter in electrical,ferroelectric and piezoelectric characteristics,thus limiting the nanoscale research and reliability of nano-devices.However,no effective method aiming at large-area uniform organic ferroelectric LB film has ever been reported to date.Herein,we present a facile hot-pressing strategy to prepare relatively large-area poly(vinylidene fluoride)(PVDF)LB film with ultra-smooth surface root mean square(RMS)roughness is 0.3 nm in a 30μm×30μm area comparable to that of metal substrate,which maximized the potential of LB technique to control thickness distribution.More importantly,compared with traditionally annealed LB film,the hot-pressed LB film manifests significantly improved structure uniformity,less fluctuation in ferroelectric characteristics and higher dielectric and piezoelectric responses,owing to the uniform dipole orientation and higher crystalline quality.Besides,different surface charge relaxation behaviors are investigated and the underlying mechanisms are explained in the light of the interplay of surface charge and polarization charge in the case of nanoscale non-uniform switching.We believe that our work not only presents a novel strategy to endow PVDF LB film with unprecedented reliability and improved performance as a competitive candidate for future ferroelectric tunnel junctions(FTJs)and nano electro mechanical systems(NEMS),but also reveals an attracting coupling effect between the surface potential distribution and nanoscale non-uniform switching behavior,which is crucial for the understanding of local transport characterization modulated by band structure,bit signal stability for data-storage application and the related surface charge research,such as charge gradient microscopy(CGM)based on the collection of surface charge on the biased ferroelectric domains. 展开更多
关键词 Poly(vinylidene fluoride)(PVDF) Langmuir-Blodgett film Roughness FERROELECTRIC PIEZORESPONSE Charge relaxation
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