乔瓦尼·皮耶路易吉·达·帕莱斯特里那(Giovanni Pierluigi da Palestrina,1525—1594)是文艺复兴时期意大利重要作曲家,出生于罗马附近的帕莱斯特里那城。他的一生创作了大量作品,以弥撒曲和牧歌等尤为著名。帕莱斯特里...乔瓦尼·皮耶路易吉·达·帕莱斯特里那(Giovanni Pierluigi da Palestrina,1525—1594)是文艺复兴时期意大利重要作曲家,出生于罗马附近的帕莱斯特里那城。他的一生创作了大量作品,以弥撒曲和牧歌等尤为著名。帕莱斯特里劝说教会放弃了对复调音乐的限制,传说他那至纯至美的《马切鲁斯教皇弥撒曲》"拯救"了复调音乐,帕莱斯特里那的创作对天主教教堂音乐的发展起到很重要的作用,同时也是文艺复兴时期复调音乐的集大成者。他那独特的复调音乐风格,被后人称为"帕莱斯特里那风格"。这样一位在西方音乐史上举足轻重的作曲家,后人对他的研究必定是像大海一样宽阔而深邃的。本文试从这磅礴的大海中拾捡到几颗珍珠加以研究、综述。展开更多
Amorphous indium-gallium-zinc oxide(IGZO) transparent conductive thin films are prepared on glass substrates by radio frequency(RF) magnetron sputtering. The effects of seven factors, which are substrate temperature, ...Amorphous indium-gallium-zinc oxide(IGZO) transparent conductive thin films are prepared on glass substrates by radio frequency(RF) magnetron sputtering. The effects of seven factors, which are substrate temperature, sputtering atmosphere, working pressure, sputtering power, annealing temperature, negative bias voltage and sputtering time, on Hall mobility, transmittance and surface roughness are studied through orthogonal experiments. The results show that the effects of working pressure, substrate temperature and sputtering atmosphere on performance of films are the most prominent. According to the experimental results and discussion, relatively reasonable process parameters are obtained, which are working pressure of 0.35 Pa, substrate temperature of 200 °C, sputtering atmosphere of Ar, sputtering power of 125 W, sputtering time of 30 min, negative bias voltage of 0 V and annealing temperature of 300 °C.展开更多
文摘乔瓦尼·皮耶路易吉·达·帕莱斯特里那(Giovanni Pierluigi da Palestrina,1525—1594)是文艺复兴时期意大利重要作曲家,出生于罗马附近的帕莱斯特里那城。他的一生创作了大量作品,以弥撒曲和牧歌等尤为著名。帕莱斯特里劝说教会放弃了对复调音乐的限制,传说他那至纯至美的《马切鲁斯教皇弥撒曲》"拯救"了复调音乐,帕莱斯特里那的创作对天主教教堂音乐的发展起到很重要的作用,同时也是文艺复兴时期复调音乐的集大成者。他那独特的复调音乐风格,被后人称为"帕莱斯特里那风格"。这样一位在西方音乐史上举足轻重的作曲家,后人对他的研究必定是像大海一样宽阔而深邃的。本文试从这磅礴的大海中拾捡到几颗珍珠加以研究、综述。
文摘Amorphous indium-gallium-zinc oxide(IGZO) transparent conductive thin films are prepared on glass substrates by radio frequency(RF) magnetron sputtering. The effects of seven factors, which are substrate temperature, sputtering atmosphere, working pressure, sputtering power, annealing temperature, negative bias voltage and sputtering time, on Hall mobility, transmittance and surface roughness are studied through orthogonal experiments. The results show that the effects of working pressure, substrate temperature and sputtering atmosphere on performance of films are the most prominent. According to the experimental results and discussion, relatively reasonable process parameters are obtained, which are working pressure of 0.35 Pa, substrate temperature of 200 °C, sputtering atmosphere of Ar, sputtering power of 125 W, sputtering time of 30 min, negative bias voltage of 0 V and annealing temperature of 300 °C.
