The design, fabrication, and the characterization of a 0.5-V Josephson junction array device are presented for the quantum voltage standards in the National Institute of Metrology(NIM) of China. The device consists of...The design, fabrication, and the characterization of a 0.5-V Josephson junction array device are presented for the quantum voltage standards in the National Institute of Metrology(NIM) of China. The device consists of four junction arrays, each of which has 1200 3-stacked Nb/NbxSi1-x/Nb junctions and an on-chip superconducting microwave circuit which is mainly a power divider enabling each Josephson array being loaded with an equal amount of microwave power. A direct current(dc) quantum voltage of about 0.5 V with a ~1-mA current margin of the 1 st quantum voltage step is obtained.To further prove the quality of NIM device, a comparison between the NIM device with the National Institute of Standards and Technology(NIST) programmable Josephson voltage standard(PJVS) system device is conducted. The difference of the reproduced 0.5-V quantum voltage between the two devices is about 0.55 nV, which indicates good agreement between the two devices. With the homemade device, we have realized a precise and applicable 0.5-V applicable-level quantum voltage.展开更多
Large-scale Josephson junction(JJ)arrays are essential in many applications,especially quantum voltage standards application for which hundreds of thousands of junctions are required to realize a high quantum voltage....Large-scale Josephson junction(JJ)arrays are essential in many applications,especially quantum voltage standards application for which hundreds of thousands of junctions are required to realize a high quantum voltage.For almost all applications,high-quality JJ arrays must be realized in a small chip area.This study proposes vertically quadruplestacked Nb/(NbxSi1-x/Nb)4 JJs to increase the integration density of junctions in an array.The current–voltage(I–V)characteristics of a single stack of Nb/(NbxSi1??x/Nb)4 JJs have been measured at 4.2 K.The uniformity of junctions in one stack and the uniformity of several stacks over the entire 2 inches wafer have been analyzed.By optimizing the fabrication parameters,a large-scale quadruple-stacked Nb/(NbxSi1??x/Nb)4 array consisting of 400000 junctions is realized.Good DC I–V characteristics are obtained,indicating the good uniformity of the large-scale array.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFF02000402)
文摘The design, fabrication, and the characterization of a 0.5-V Josephson junction array device are presented for the quantum voltage standards in the National Institute of Metrology(NIM) of China. The device consists of four junction arrays, each of which has 1200 3-stacked Nb/NbxSi1-x/Nb junctions and an on-chip superconducting microwave circuit which is mainly a power divider enabling each Josephson array being loaded with an equal amount of microwave power. A direct current(dc) quantum voltage of about 0.5 V with a ~1-mA current margin of the 1 st quantum voltage step is obtained.To further prove the quality of NIM device, a comparison between the NIM device with the National Institute of Standards and Technology(NIST) programmable Josephson voltage standard(PJVS) system device is conducted. The difference of the reproduced 0.5-V quantum voltage between the two devices is about 0.55 nV, which indicates good agreement between the two devices. With the homemade device, we have realized a precise and applicable 0.5-V applicable-level quantum voltage.
基金National Key R&D Program of China(Grant No.2016YFF0200402).
文摘Large-scale Josephson junction(JJ)arrays are essential in many applications,especially quantum voltage standards application for which hundreds of thousands of junctions are required to realize a high quantum voltage.For almost all applications,high-quality JJ arrays must be realized in a small chip area.This study proposes vertically quadruplestacked Nb/(NbxSi1-x/Nb)4 JJs to increase the integration density of junctions in an array.The current–voltage(I–V)characteristics of a single stack of Nb/(NbxSi1??x/Nb)4 JJs have been measured at 4.2 K.The uniformity of junctions in one stack and the uniformity of several stacks over the entire 2 inches wafer have been analyzed.By optimizing the fabrication parameters,a large-scale quadruple-stacked Nb/(NbxSi1??x/Nb)4 array consisting of 400000 junctions is realized.Good DC I–V characteristics are obtained,indicating the good uniformity of the large-scale array.
