Using high temperature heteroepitaxial growth method the single-crystalline diamond film growth conditions have been studied by Raman spectrum and transmission electron diffraction.High temperature,low alcohol concent...Using high temperature heteroepitaxial growth method the single-crystalline diamond film growth conditions have been studied by Raman spectrum and transmission electron diffraction.High temperature,low alcohol concentration,slow gas flow velocity,long epitaxial time and substrate located near the gas exit side on the susceptor are the favourable conditions for growing single-crystalline diamond film.展开更多
It is clearly shown that the stagnant layer effect is present in entire temperature range in CVD process by pyrolysis of silane. The Curves in logarithmic growth rate vs reciprocal temperature plot can be divided into...It is clearly shown that the stagnant layer effect is present in entire temperature range in CVD process by pyrolysis of silane. The Curves in logarithmic growth rate vs reciprocal temperature plot can be divided into three straight line ranges. In high temperature region the rate-controlling mechanism is the diffusion of silicon atoms, but not of silane, which pass through the stagnant layer after thermal decomposition of silane. In intermediate and low temperature region the growth rate-controlling factor is the decomposition rate of silane in the stagnant layer, but not the surface reaction process. Owing to the difference in ratecontrolling mechanism the growth rate has different dependences on the height of stagnant layer. In intermediate and low temperature region the growth rate is proportional to the stagnant layer height, but in high temperature region it is inversely proportional to the square of the stagnant layer height.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.69376007.
文摘Using high temperature heteroepitaxial growth method the single-crystalline diamond film growth conditions have been studied by Raman spectrum and transmission electron diffraction.High temperature,low alcohol concentration,slow gas flow velocity,long epitaxial time and substrate located near the gas exit side on the susceptor are the favourable conditions for growing single-crystalline diamond film.
文摘It is clearly shown that the stagnant layer effect is present in entire temperature range in CVD process by pyrolysis of silane. The Curves in logarithmic growth rate vs reciprocal temperature plot can be divided into three straight line ranges. In high temperature region the rate-controlling mechanism is the diffusion of silicon atoms, but not of silane, which pass through the stagnant layer after thermal decomposition of silane. In intermediate and low temperature region the growth rate-controlling factor is the decomposition rate of silane in the stagnant layer, but not the surface reaction process. Owing to the difference in ratecontrolling mechanism the growth rate has different dependences on the height of stagnant layer. In intermediate and low temperature region the growth rate is proportional to the stagnant layer height, but in high temperature region it is inversely proportional to the square of the stagnant layer height.
