The stable properties of N-doped p-type ZnO thin films with preferential nonpolar(100) plane orientation relative to polar(002) plane orientation are investigated. The two kinds of oriented thin films are fabricated b...The stable properties of N-doped p-type ZnO thin films with preferential nonpolar(100) plane orientation relative to polar(002) plane orientation are investigated. The two kinds of oriented thin films are fabricated by the methods of post heat treatment and double sources in situ, respectively. The Hall investigations demonstrate that N-doped p-type ZnO thin films with preferential nonpolar(100) plane orientation are more stable,and the results are also proved by build-in electric field model and electronic structure calculations of the films based on the first principle.展开更多
The properties of ZnO thin film on sapphire (0001) substrate fabricated by single source chemical vapour deposition (SSCVD) method are studied. X-ray diffraction (XRD) analysis demonstrates that the film exhibits hexa...The properties of ZnO thin film on sapphire (0001) substrate fabricated by single source chemical vapour deposition (SSCVD) method are studied. X-ray diffraction (XRD) analysis demonstrates that the film exhibits hexagonal structures but with preferential nonpolar (100) plane orientation, which is different from the crystalline structure of substrate, and its formation mechanism is also analyzed. The film has the characteristic of p-type conductivity originating from excess of oxygen, and its p-type conductivity is comparatively stable due to its nonpolar plane orientation. A strong ultraviolet (UV) emission and a high light transmission in visible wavelength region are observed from photo-luminescence (PL) spectrum and transmittance spectra at the room temperature, and the strong ultraviolet emission originates from the recombination of free and bound excitons. Compared with the ZnO film on silicon substrates, the exciton emission peaks of the film on sapphire substrate show a slight blue shift about 50 meV, which might be related to the different crystallite sizes or surface stress of the films.展开更多
基金supported by the National Natural Science Foundation of China(No.61204088)the Fundamental Research Funds for the Central Universities(No.ZYGX2011J029)
文摘The stable properties of N-doped p-type ZnO thin films with preferential nonpolar(100) plane orientation relative to polar(002) plane orientation are investigated. The two kinds of oriented thin films are fabricated by the methods of post heat treatment and double sources in situ, respectively. The Hall investigations demonstrate that N-doped p-type ZnO thin films with preferential nonpolar(100) plane orientation are more stable,and the results are also proved by build-in electric field model and electronic structure calculations of the films based on the first principle.
基金the National Natural Science Foundation of China (No.61204088)the Fundamental Research Funds for the Central Universities (No.ZYGX2011J029)
文摘The properties of ZnO thin film on sapphire (0001) substrate fabricated by single source chemical vapour deposition (SSCVD) method are studied. X-ray diffraction (XRD) analysis demonstrates that the film exhibits hexagonal structures but with preferential nonpolar (100) plane orientation, which is different from the crystalline structure of substrate, and its formation mechanism is also analyzed. The film has the characteristic of p-type conductivity originating from excess of oxygen, and its p-type conductivity is comparatively stable due to its nonpolar plane orientation. A strong ultraviolet (UV) emission and a high light transmission in visible wavelength region are observed from photo-luminescence (PL) spectrum and transmittance spectra at the room temperature, and the strong ultraviolet emission originates from the recombination of free and bound excitons. Compared with the ZnO film on silicon substrates, the exciton emission peaks of the film on sapphire substrate show a slight blue shift about 50 meV, which might be related to the different crystallite sizes or surface stress of the films.
