在K.S.Chen et al.(2003)和M.T.Chao et al.(2005)研究理论的基础上,改变他们使用的单变量工序能力指数表达式,建立了基于成品率的多变量工序能力指数计算模型。该模型不要求工序的单个质量特性数据分布必须满足正态分布,并在一定程度...在K.S.Chen et al.(2003)和M.T.Chao et al.(2005)研究理论的基础上,改变他们使用的单变量工序能力指数表达式,建立了基于成品率的多变量工序能力指数计算模型。该模型不要求工序的单个质量特性数据分布必须满足正态分布,并在一定程度上简化了计算过程,其理论基础对应用人员更容易被理解。同时,指出并改正当前对工序能力指数和成品率关系的错误应用,最后给出该多变量工序能力指数的应用分析。展开更多
HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performa...HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performance of the HfAlO/InAlAs MOS-capacitor, samples are annealed at different temperatures for investigating the HfAlO/InAlAs interfacial characyeristics and the device's electrical characteristics. We find that as annealing temperature increases from 280 ℃ to 480 ℃, the surface roughness on the oxide layer is improved. A maximum equivalent dielectric constant of 8.47, a minimum equivalent oxide thickness of 5.53 nm, and a small threshold voltage of -1.05 V are detected when being annealed at 380 ℃;furthermore, a low interfacial state density is yielded at 380 ℃, and this can effectively reduce the device leakage current density to a significantly low value of 1×10-7 A/cm2 at 3-V bias voltage. Therefore, we hold that 380 ℃ is the best compromised annealing temperature to ensure that the device performance is improved effectively. This study provides a reliable conceptual basis for preparing and applying HfAlO/InAlAs MOS-capacitor as the isolated gate on InAs/AlSb HEMT devices.展开更多
文摘在K.S.Chen et al.(2003)和M.T.Chao et al.(2005)研究理论的基础上,改变他们使用的单变量工序能力指数表达式,建立了基于成品率的多变量工序能力指数计算模型。该模型不要求工序的单个质量特性数据分布必须满足正态分布,并在一定程度上简化了计算过程,其理论基础对应用人员更容易被理解。同时,指出并改正当前对工序能力指数和成品率关系的错误应用,最后给出该多变量工序能力指数的应用分析。
文摘HfAlO/InAlAs metal-oxide-semiconductor capacitor (MOS capacitor) is considered as the most popular candidate of the isolated gate of InAs/AlSb high electron mobility transistor (HEMT). In order to improve the performance of the HfAlO/InAlAs MOS-capacitor, samples are annealed at different temperatures for investigating the HfAlO/InAlAs interfacial characyeristics and the device's electrical characteristics. We find that as annealing temperature increases from 280 ℃ to 480 ℃, the surface roughness on the oxide layer is improved. A maximum equivalent dielectric constant of 8.47, a minimum equivalent oxide thickness of 5.53 nm, and a small threshold voltage of -1.05 V are detected when being annealed at 380 ℃;furthermore, a low interfacial state density is yielded at 380 ℃, and this can effectively reduce the device leakage current density to a significantly low value of 1×10-7 A/cm2 at 3-V bias voltage. Therefore, we hold that 380 ℃ is the best compromised annealing temperature to ensure that the device performance is improved effectively. This study provides a reliable conceptual basis for preparing and applying HfAlO/InAlAs MOS-capacitor as the isolated gate on InAs/AlSb HEMT devices.
