We present a convenient and practical electromagnetic(EM)assisted small-signal model extraction method for InP double-heterojunction bipolar transistors(DHBTs).Parasitic parameters of pad and electrode fingers are ext...We present a convenient and practical electromagnetic(EM)assisted small-signal model extraction method for InP double-heterojunction bipolar transistors(DHBTs).Parasitic parameters of pad and electrode fingers are extracted by means of 3D EM simulation.The simulations with a new excitation scheme are closer to the actual on-wafer measurement conditions.Appropriate simulation settings are calibrated by comparing measurement and simulation of OPEN and SHORT structures.A simplerπ-type topology is proposed for the intrinsic model,in which the base-collector resistance Rμ,output resistance Rce are deleted,and a capacitance Cce is introduced to characterize the capacitive parasitic caused by the collector finger and emitter ground bar.The intrinsic parameters are all extracted by exact equations that are derived from rigorous mathematics.The method is characterized by its ease of implementation and the explicit physical meaning of extraction procedure.Experimental validations are performed at four biases for three InGaAs/InP HBT devices with 0.8×7μm,0.8×10μm and 0.8×15μm emitter,and quite good fitting results are obtained in the range of 0.1-50 GHz.展开更多
文摘We present a convenient and practical electromagnetic(EM)assisted small-signal model extraction method for InP double-heterojunction bipolar transistors(DHBTs).Parasitic parameters of pad and electrode fingers are extracted by means of 3D EM simulation.The simulations with a new excitation scheme are closer to the actual on-wafer measurement conditions.Appropriate simulation settings are calibrated by comparing measurement and simulation of OPEN and SHORT structures.A simplerπ-type topology is proposed for the intrinsic model,in which the base-collector resistance Rμ,output resistance Rce are deleted,and a capacitance Cce is introduced to characterize the capacitive parasitic caused by the collector finger and emitter ground bar.The intrinsic parameters are all extracted by exact equations that are derived from rigorous mathematics.The method is characterized by its ease of implementation and the explicit physical meaning of extraction procedure.Experimental validations are performed at four biases for three InGaAs/InP HBT devices with 0.8×7μm,0.8×10μm and 0.8×15μm emitter,and quite good fitting results are obtained in the range of 0.1-50 GHz.
