用溶剂热法合成 PtNi纳米颗粒，将其修饰在玻碳电极表面制成电化学传感器并将其用于检测。探讨了测试底液、富集电位以及富集时间等实验条件对传感器性能的影响。结果表明，在电位为0.5 V 条件下，该传感器检测双酚 A 的线性范围为0.99...用溶剂热法合成 PtNi纳米颗粒，将其修饰在玻碳电极表面制成电化学传感器并将其用于检测。探讨了测试底液、富集电位以及富集时间等实验条件对传感器性能的影响。结果表明，在电位为0.5 V 条件下，该传感器检测双酚 A 的线性范围为0.99～99.9x10－6 mol／L，其检测限为3.36x10－7 mol／L。该传感器选择性好、灵敏度高、具有良好的重现性和稳定性。展开更多
In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus ...In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P＋ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.展开更多
The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process fo...The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.展开更多
文摘用溶剂热法合成 PtNi纳米颗粒，将其修饰在玻碳电极表面制成电化学传感器并将其用于检测。探讨了测试底液、富集电位以及富集时间等实验条件对传感器性能的影响。结果表明，在电位为0.5 V 条件下，该传感器检测双酚 A 的线性范围为0.99～99.9x10－6 mol／L，其检测限为3.36x10－7 mol／L。该传感器选择性好、灵敏度高、具有良好的重现性和稳定性。
基金Supported by National Natural Science Foundation of China(11175223,11305231,11205220)
文摘In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P＋ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.
文摘The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.
