Hill-like polycrystalline diamond grains(HPDGs)randomly emerged on a heavy boron-doped p+single-crystal diamond(SCD)film by prolonging the growth duration of the chemical vapor deposition process.The Raman spectral re...Hill-like polycrystalline diamond grains(HPDGs)randomly emerged on a heavy boron-doped p+single-crystal diamond(SCD)film by prolonging the growth duration of the chemical vapor deposition process.The Raman spectral results confirm that a relatively higher boron concentration(~1.1×10^(21) cm^(-3))is detected on the HPDG with respect to the SCD region(~5.4×10^(20) cm^(-3)).It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination.The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination,which means that the HPDGs provide a leakage path to form an ohmic contact.There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions.The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.展开更多
Surface terminations of diamond play an important role in determining the electric properties of diamond-based electronic devices.We report an ultraviolet/ozone(UV/ozone)treatment process on hydrogen-terminated single...Surface terminations of diamond play an important role in determining the electric properties of diamond-based electronic devices.We report an ultraviolet/ozone(UV/ozone)treatment process on hydrogen-terminated single crystal diamond(H-diamond)to modulate the carrier behavior related to varying oxygen adsorption on surfaces.By UV/ozone treatments,the induced oxygen radicals are chemically adsorbed on the H-terminated diamond and replace the original adsorbed H,which is analyzed by x-ray photoelectron spectroscopy.The concentration of oxygen adsorbed on surface increases from^3%to^8%with increasing the ozone treatment time from 20 s to 600 s.It is further confirmed by examining the wettability properties of the varying diamond surfaces,where the hydrophobic for H-termination transfers to hydrophilic for partly O-termination.Hall effect measurements show that the resistance(hole mobility)of the UV/ozone-treated H-diamond continuously increases(decrease)by two orders of magnitude with increasing UV/ozone treatment time from 20 s to 600 s.The results reveal that UV/ozone treatment becomes an efficient method to modulate the surface electrical properties of H-diamonds for further investigating the oxygenation effect on two-dimensional hole gas based diamond devices applied in some extreme environments.展开更多
基金Project supported by the Key-Area Research and Development Program of Guangdong Province(Grant No.2020B0101690001)the National Natural Science Foundation of China(NSFC)(Grant No.51972135).
文摘Hill-like polycrystalline diamond grains(HPDGs)randomly emerged on a heavy boron-doped p+single-crystal diamond(SCD)film by prolonging the growth duration of the chemical vapor deposition process.The Raman spectral results confirm that a relatively higher boron concentration(~1.1×10^(21) cm^(-3))is detected on the HPDG with respect to the SCD region(~5.4×10^(20) cm^(-3)).It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination.The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination,which means that the HPDGs provide a leakage path to form an ohmic contact.There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions.The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.
基金Supported by the National Natural Science Foundation of China under Grant Nos.51672102 and 51972135。
文摘Surface terminations of diamond play an important role in determining the electric properties of diamond-based electronic devices.We report an ultraviolet/ozone(UV/ozone)treatment process on hydrogen-terminated single crystal diamond(H-diamond)to modulate the carrier behavior related to varying oxygen adsorption on surfaces.By UV/ozone treatments,the induced oxygen radicals are chemically adsorbed on the H-terminated diamond and replace the original adsorbed H,which is analyzed by x-ray photoelectron spectroscopy.The concentration of oxygen adsorbed on surface increases from^3%to^8%with increasing the ozone treatment time from 20 s to 600 s.It is further confirmed by examining the wettability properties of the varying diamond surfaces,where the hydrophobic for H-termination transfers to hydrophilic for partly O-termination.Hall effect measurements show that the resistance(hole mobility)of the UV/ozone-treated H-diamond continuously increases(decrease)by two orders of magnitude with increasing UV/ozone treatment time from 20 s to 600 s.The results reveal that UV/ozone treatment becomes an efficient method to modulate the surface electrical properties of H-diamonds for further investigating the oxygenation effect on two-dimensional hole gas based diamond devices applied in some extreme environments.
