从物理机制上分析了超高速InP/InGaAs SHBT碰撞电离与温度的关系,通过加入表示温度的参数和简化电场计算,得到一种改进的碰撞电离模型.同时针对自有工艺和器件特性,采用SDD(symbolically defined device)技术建立了一个包括碰撞电离和...从物理机制上分析了超高速InP/InGaAs SHBT碰撞电离与温度的关系,通过加入表示温度的参数和简化电场计算,得到一种改进的碰撞电离模型.同时针对自有工艺和器件特性,采用SDD(symbolically defined device)技术建立了一个包括碰撞电离和自热效应的InP/InGaAs SHBT的直流模型.模型内嵌入HP-ADS中仿真并与测试结果进行比较,准确地拟合了InP/InGaAs SHBT的器件特性.展开更多
In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors(HEMTs) each with a gate-width of 2 × 50 μm are designed and fabricated. Their excellent DC and RF ch...In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors(HEMTs) each with a gate-width of 2 × 50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance(gm,max) values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage(BVGD) defined at a gate current of -1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency( fT) of 164 GHz and a maximum oscillation frequency( fmax) of 390 GHz are successfully obtained; moreover, the fmaxof our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high gm,max, BVGD, fmax, and channel current collectively make this device a good candidate for high frequency power applications.展开更多
基金Project supported by the National Basic Research Program of China(Grant Nos.2010CB327502 and 2010CB327505)the Advance Research Project(Grant No.5130803XXXX)
文摘In this paper, 0.15-μm gate-length In0.52Al0.48As/In0.53Ga0.47As InP-based high electron mobility transistors(HEMTs) each with a gate-width of 2 × 50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance(gm,max) values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage(BVGD) defined at a gate current of -1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency( fT) of 164 GHz and a maximum oscillation frequency( fmax) of 390 GHz are successfully obtained; moreover, the fmaxof our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high gm,max, BVGD, fmax, and channel current collectively make this device a good candidate for high frequency power applications.
