Radicals produced by the plasma enhanced chemistry vapour deposition technique in SiCl4 plasma are identified by mass spectrometry using our newly proposed straight-line fit method. Since flow rate is one of the most ...Radicals produced by the plasma enhanced chemistry vapour deposition technique in SiCl4 plasma are identified by mass spectrometry using our newly proposed straight-line fit method. Since flow rate is one of the most important parameters in depositing thin films, we present the effects of SiCl4 flow rate variation on SiCln （n 〈 3） densities. The experimental results demonstrate that Si and SiCln （n = 1, 2） densities decrease with increasing SiCl4 flow rate. After reaching the minimum values at a flow rate of 17 and 13sccm, respectively, Si and SiCln （n = 1, 2） densities slightly increase with further increase of flow rate to 20.5sccm. These results could be interpreted to which the depletion fraction of SiCl4 decreases and the residence time of SiCl4 molecule becomes shorter, with the increasing SICl4 flow rate. In order to obtain high-quality poly-Si films with high growth rate, it is better to use smaller flow rate of SICl4 source gas for depositing films.展开更多
A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electr...A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices （OLEDs）, a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide （ITO） anode etched by a conventional strong etchant of aqua regia.展开更多
The influence of oxygen content on the dielectric property of BiFeO3 ceramics is studied by experiment and firstprinciples calculation. The experimental result demonstrates that the dielectric constant of BiFeO3 is st...The influence of oxygen content on the dielectric property of BiFeO3 ceramics is studied by experiment and firstprinciples calculation. The experimental result demonstrates that the dielectric constant of BiFeO3 is strongly dependent on introduced oxygen and oxygen vacancies. By comparison with BiFeO3, the introduced oxygen and oxygen vacancies can lead to a reduction in dielectric constant of BiFeO5 at a lower frequency. The first-principles calculation also shows a similar result when photon energy is in a range of 2.0-4.1 eV. A likely explanation is that this oxygen content dependence may be ascribed to the distortion of Fe-O octahedron structure due to oxygen vacancies or excess oxygen ions in the crystal structure of BiFeO3.展开更多
Perovskite solar cells(PSCs)have emerged as strong potential candidates for future photovoltaic technologies.The power conversion efficiency(PCE)of PSCs has already surpassed 26%,approaching their theoretical limit[1]...Perovskite solar cells(PSCs)have emerged as strong potential candidates for future photovoltaic technologies.The power conversion efficiency(PCE)of PSCs has already surpassed 26%,approaching their theoretical limit[1].The commonly used device structure for PSCs is ITO/SnO_(2)/perovskite/2,2',7,7'-tetrakis-(N,N-di-4-methox yphenylamino)-9,9'-spirobifluorene(spiro-OMeTAD)/Au[2].展开更多
文摘Radicals produced by the plasma enhanced chemistry vapour deposition technique in SiCl4 plasma are identified by mass spectrometry using our newly proposed straight-line fit method. Since flow rate is one of the most important parameters in depositing thin films, we present the effects of SiCl4 flow rate variation on SiCln （n 〈 3） densities. The experimental results demonstrate that Si and SiCln （n = 1, 2） densities decrease with increasing SiCl4 flow rate. After reaching the minimum values at a flow rate of 17 and 13sccm, respectively, Si and SiCln （n = 1, 2） densities slightly increase with further increase of flow rate to 20.5sccm. These results could be interpreted to which the depletion fraction of SiCl4 decreases and the residence time of SiCl4 molecule becomes shorter, with the increasing SICl4 flow rate. In order to obtain high-quality poly-Si films with high growth rate, it is better to use smaller flow rate of SICl4 source gas for depositing films.
基金supported by the National Natural Science Foundation of China(Grant Nos.61307036 and 61307037)the Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD),Chinathe University Science Research Project of Jiangsu Province,China(Grant No.12KJB510028)
文摘A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices （OLEDs）, a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide （ITO） anode etched by a conventional strong etchant of aqua regia.
基金supported by the National Natural Science Foundation of China (Grant No. 60571063)
文摘The influence of oxygen content on the dielectric property of BiFeO3 ceramics is studied by experiment and firstprinciples calculation. The experimental result demonstrates that the dielectric constant of BiFeO3 is strongly dependent on introduced oxygen and oxygen vacancies. By comparison with BiFeO3, the introduced oxygen and oxygen vacancies can lead to a reduction in dielectric constant of BiFeO5 at a lower frequency. The first-principles calculation also shows a similar result when photon energy is in a range of 2.0-4.1 eV. A likely explanation is that this oxygen content dependence may be ascribed to the distortion of Fe-O octahedron structure due to oxygen vacancies or excess oxygen ions in the crystal structure of BiFeO3.
基金the National Natural Science Foundation of China(52073197,62075148,52273189)the Natural Science Foundation of Jiangsu Province(BE20220262,BK20201413+7 种基金BK20211314)Suzhou Science and Technology Plan Project(N321461821 and ST202212)Postgraduate Research&Practice Innovation Program of Jiangsu Province(23214000)Suzhou Key Laboratory of Functional Nano&Soft MaterialsCollaborative Innovation Center of Suzhou Nano Science&Technologythe 111 ProjectJoint International Research Laboratory of Carbon-Based Functional Materials and DevicesSoochow University Tang Scholar。
文摘Perovskite solar cells(PSCs)have emerged as strong potential candidates for future photovoltaic technologies.The power conversion efficiency(PCE)of PSCs has already surpassed 26%,approaching their theoretical limit[1].The commonly used device structure for PSCs is ITO/SnO_(2)/perovskite/2,2',7,7'-tetrakis-(N,N-di-4-methox yphenylamino)-9,9'-spirobifluorene(spiro-OMeTAD)/Au[2].
