提出了一种新的基于Philips MOS Model20(MM20)的RF-SOI(radio frequency silicon-on-insulator)LDMOS(laterally diffused MOS)大信号等效电路模型.描述了弱雪崩效应以及由热效应引起的功率耗散现象.射频寄生元件由实验测得的S参数解...提出了一种新的基于Philips MOS Model20(MM20)的RF-SOI(radio frequency silicon-on-insulator)LDMOS(laterally diffused MOS)大信号等效电路模型.描述了弱雪崩效应以及由热效应引起的功率耗散现象.射频寄生元件由实验测得的S参数解析提取,并通过必要的优化快速准确地获得最终值.模型的有效性是通过一20栅指(每指栅长L=1μm,宽W=50μm)体接触高阻RF-SOI LDMOS在直流,交流小信号和大信号条件下的实验数据验证的.结果表明,直流、S参数(10MHz^20.01GHz)以及功率特性的仿真和实验测得数据能够很好地拟合,说明本文提出的模型具有良好和可靠的精度.本文完成了对MM20在RF-SOI LDMOS大信号应用领域的拓展.模型由Verilog-A描述,使用ADS(hpeesofsim)电路仿真器.展开更多
A novel double-n equivalent circuit model for on-chip spiral inductors is presented. A hierarchical structure, similar to that of MOS models is introduced. This enables a strict partition of the geometry scaling in th...A novel double-n equivalent circuit model for on-chip spiral inductors is presented. A hierarchical structure, similar to that of MOS models is introduced. This enables a strict partition of the geometry scaling in the global model and the model equations in the local model. The major parasitic effects, including the skin effect, the proximity effect, the inductive and capacitive loss in the substrate, and the distributed effect, are analytically calculated with geometric and process parameters in the locaMevel. As accurate values of the layout and process parameters are difficult to obtain, a set of model parameters is introduced to correct the errors caused by using these given inaccurate layout and process parameters at the local level. Scaling rules are defined to enable the formation of models that describe the behavior of the inductors of a variety of geometric dimensions. A series of asymmetric inductors with different geometries are fabricated on a standard 0.18-μm SiGe BiCMOS process with 100 Ω/cm substrate resistivity to verify the proposed model. Excellent agreement has been obtained between the measured results and the proposed model over a wide frequency range.展开更多
文摘提出了一种新的基于Philips MOS Model20(MM20)的RF-SOI(radio frequency silicon-on-insulator)LDMOS(laterally diffused MOS)大信号等效电路模型.描述了弱雪崩效应以及由热效应引起的功率耗散现象.射频寄生元件由实验测得的S参数解析提取,并通过必要的优化快速准确地获得最终值.模型的有效性是通过一20栅指(每指栅长L=1μm,宽W=50μm)体接触高阻RF-SOI LDMOS在直流,交流小信号和大信号条件下的实验数据验证的.结果表明,直流、S参数(10MHz^20.01GHz)以及功率特性的仿真和实验测得数据能够很好地拟合,说明本文提出的模型具有良好和可靠的精度.本文完成了对MM20在RF-SOI LDMOS大信号应用领域的拓展.模型由Verilog-A描述,使用ADS(hpeesofsim)电路仿真器.
基金Project supported by the State Key Development Program for Basic Research of China(No.2010CB327403)
文摘A novel double-n equivalent circuit model for on-chip spiral inductors is presented. A hierarchical structure, similar to that of MOS models is introduced. This enables a strict partition of the geometry scaling in the global model and the model equations in the local model. The major parasitic effects, including the skin effect, the proximity effect, the inductive and capacitive loss in the substrate, and the distributed effect, are analytically calculated with geometric and process parameters in the locaMevel. As accurate values of the layout and process parameters are difficult to obtain, a set of model parameters is introduced to correct the errors caused by using these given inaccurate layout and process parameters at the local level. Scaling rules are defined to enable the formation of models that describe the behavior of the inductors of a variety of geometric dimensions. A series of asymmetric inductors with different geometries are fabricated on a standard 0.18-μm SiGe BiCMOS process with 100 Ω/cm substrate resistivity to verify the proposed model. Excellent agreement has been obtained between the measured results and the proposed model over a wide frequency range.
