A new empirical model to estimate the content of sp^3 in diamond-like carbon (DLC) films is presented, based on the conventional Raman spectra excited by 488nm or 514nm visible light for different carbons. It is fou...A new empirical model to estimate the content of sp^3 in diamond-like carbon (DLC) films is presented, based on the conventional Raman spectra excited by 488nm or 514nm visible light for different carbons. It is found that bandwidth of the G peak is related to the sp^3 fraction. A wider bandwidth of the G peak shows a higher sp^3 fraction in DLC films.展开更多
Ge1-x Cx films with GeC content up to 11.6% can be prepared by using a medium frequency magnetron sputtering technique in our study. X-ray photoelectron analysis for these Ge1-x Cx films shows that the Ge1-x Cx films ...Ge1-x Cx films with GeC content up to 11.6% can be prepared by using a medium frequency magnetron sputtering technique in our study. X-ray photoelectron analysis for these Ge1-x Cx films shows that the Ge1-x Cx films consist of C, Ge, GeC and GeOy. The content of GeC increases from 10.7% at 0 V to 11.6% at 250 V, and decreases to 9.6% at 350 V, and then increases again to 10.4% at 450 V. The Raman analysis confirms the result of XPS for checking GeC in the deposited Ge1-x Cx films. The related mechanism is discussed.展开更多
文摘A new empirical model to estimate the content of sp^3 in diamond-like carbon (DLC) films is presented, based on the conventional Raman spectra excited by 488nm or 514nm visible light for different carbons. It is found that bandwidth of the G peak is related to the sp^3 fraction. A wider bandwidth of the G peak shows a higher sp^3 fraction in DLC films.
文摘Ge1-x Cx films with GeC content up to 11.6% can be prepared by using a medium frequency magnetron sputtering technique in our study. X-ray photoelectron analysis for these Ge1-x Cx films shows that the Ge1-x Cx films consist of C, Ge, GeC and GeOy. The content of GeC increases from 10.7% at 0 V to 11.6% at 250 V, and decreases to 9.6% at 350 V, and then increases again to 10.4% at 450 V. The Raman analysis confirms the result of XPS for checking GeC in the deposited Ge1-x Cx films. The related mechanism is discussed.