SiC whisker reinforced aluminium alloy (SiCw/Al) composite is a kind of advanced material with high properties, and has been extensively studied since the 1980’s. Many researches have shown that the high SiC-Al inter...SiC whisker reinforced aluminium alloy (SiCw/Al) composite is a kind of advanced material with high properties, and has been extensively studied since the 1980’s. Many researches have shown that the high SiC-Al interface bond strength is the main reason for the high strength and modulus of the SiCw/Al composites. In the SiCw/Al composites made by powder metallurgy, there is no reaction in the SiC-Al interfaces, but there is element diffusion, so it is concluded that the diffusion bonding is the main reason for the high SiC-Al interface bond strength in the SiCw/Al composites. However, the study展开更多
By using strong hydrogen dilution of silane in PECVD system and controlling the deposition parameters strictly, we have prepared a-Si:H and nc-Si:H as well as μc-Si:H films respectively. The structural characters of ...By using strong hydrogen dilution of silane in PECVD system and controlling the deposition parameters strictly, we have prepared a-Si:H and nc-Si:H as well as μc-Si:H films respectively. The structural characters of nc-Si: H films detected by means of HREM, Raman and X-ray diffraction spectra are identified as coinciding with the known definition of nanometer solids. The unique electrical and optical properties of nc-Si:H films are considered as the consequence of its novel structures.展开更多
基金Project supported by the National Natural Science Foundation of China
文摘SiC whisker reinforced aluminium alloy (SiCw/Al) composite is a kind of advanced material with high properties, and has been extensively studied since the 1980’s. Many researches have shown that the high SiC-Al interface bond strength is the main reason for the high strength and modulus of the SiCw/Al composites. In the SiCw/Al composites made by powder metallurgy, there is no reaction in the SiC-Al interfaces, but there is element diffusion, so it is concluded that the diffusion bonding is the main reason for the high SiC-Al interface bond strength in the SiCw/Al composites. However, the study
基金the National Natural Science Foundation of China
文摘By using strong hydrogen dilution of silane in PECVD system and controlling the deposition parameters strictly, we have prepared a-Si:H and nc-Si:H as well as μc-Si:H films respectively. The structural characters of nc-Si: H films detected by means of HREM, Raman and X-ray diffraction spectra are identified as coinciding with the known definition of nanometer solids. The unique electrical and optical properties of nc-Si:H films are considered as the consequence of its novel structures.
