SrIrO_(3),a Dirac material with a strong spin-orbit coupling(SOC),is a platform for studying topological properties in strongly correlated systems,where its band structure can be modulated by multiple factors,such as ...SrIrO_(3),a Dirac material with a strong spin-orbit coupling(SOC),is a platform for studying topological properties in strongly correlated systems,where its band structure can be modulated by multiple factors,such as crystal symmetry,elements doping,oxygen vacancies,magnetic field,and temperature.Here,we find that the engineered carrier density plays a critical role on the magnetoelectric transport properties of the topological semimetal SrIrO_(3).The decrease of carrier density subdues the weak localization and the associated negative magnetoresistance,while enhancing the SOC-induced weak anti-localization.Notably,the sample with the lowest carrier density exhibits high-field positive magnetoresistance,suggesting the presence of a Dirac cone.In addition,the anisotropic magnetoresistance indicates the anisotropy of the electronic structure near the Fermi level.The engineering of carrier density provides a general strategy to control the Fermi surface and electronic structure in topological materials.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.T2350005 and 5227123)the National Science Fund for Distinguished Young Scholars(Grant No.52225205)+1 种基金the National Key Research and Development Program of China(Grant Nos.2021YFA0718700 and 2023YFA1406500)the Fundamental Research Funds for the Central Universities。
文摘SrIrO_(3),a Dirac material with a strong spin-orbit coupling(SOC),is a platform for studying topological properties in strongly correlated systems,where its band structure can be modulated by multiple factors,such as crystal symmetry,elements doping,oxygen vacancies,magnetic field,and temperature.Here,we find that the engineered carrier density plays a critical role on the magnetoelectric transport properties of the topological semimetal SrIrO_(3).The decrease of carrier density subdues the weak localization and the associated negative magnetoresistance,while enhancing the SOC-induced weak anti-localization.Notably,the sample with the lowest carrier density exhibits high-field positive magnetoresistance,suggesting the presence of a Dirac cone.In addition,the anisotropic magnetoresistance indicates the anisotropy of the electronic structure near the Fermi level.The engineering of carrier density provides a general strategy to control the Fermi surface and electronic structure in topological materials.
