Hazy Backside Gettering with a-Si: H Film

Hazy backside gettering of boron-doped <111> siljcon wafer with a-Si: H film deposited by rf glow discharge technique (rf-GD) has been investigated by SEM, optical microscope and preferential etching tech- lique. lt is evident that the deposited film can effectively getter the haze after annealing at l l00℃in wet oxy- len ambient for 120 min. The pre-crystallization annealing at 650℃ in argon ambient for 10 min enhances the gettering effectiveness. The low temperature(200～300℃) process of growing extrinsic gettering film reduces the processing contamination.

Φ100mm重掺砷〈111〉硅单晶的制备

通过热场实验、拉晶参数实验与电阻率控制实验，研究了重掺砷＜１１１＞硅单晶的位制工艺，制备出无位错的Φ１００ｍｍ单晶，成品率达３３．８５％。还探讨了简便、高效的砷毒防护方法。