Detection wavelength is one of the key performance indices of infrared photodetectors. We study the character of detection wavelength of the strained InxGa1-xAs/GaAs very-long-wavelength (〉 12 μm) quantum well inf...Detection wavelength is one of the key performance indices of infrared photodetectors. We study the character of detection wavelength of the strained InxGa1-xAs/GaAs very-long-wavelength (〉 12 μm) quantum well infrared photodetectors (VLW-QWIPs) characterized by the photoluminescence (PL) and photocurrent (PC) measurements. Based on the theoretical calculation and experimental data, we have built a practical model for the Inx Ga1-xAs/GaAs strained VLW-QWIPs, from which the interband transitions, intersubband transition and peak detection wavelength can be determined. Afterwards, the dependences of detection wavelength and device operation mode on the In mole fraction and InxGa1-xAs well width are presented, which will be helpful for device design and optimization.展开更多
回顾了近10年基于半导体中量子限制效应红外探测器的进展.主要关注的是二维限制结构,即量子阱结构,形成的区别与传统红外光子探测的子带跃迁机理.在红外光电子领域作为新族的量子阱红外探测器(quantum well infrared photo-detector,QW...回顾了近10年基于半导体中量子限制效应红外探测器的进展.主要关注的是二维限制结构,即量子阱结构,形成的区别与传统红外光子探测的子带跃迁机理.在红外光电子领域作为新族的量子阱红外探测器(quantum well infrared photo-detector,QWIP)与最典型的红外探测器代表碲镉汞红外探测器进行了各自特色的分析,包括基本工作机理和材料与器件的制备技术等方面.对于QWIP发展的回顾提升了与碲镉汞红外探测器之间的互补关系.也给出了对于QWIP在未来发展方面的基本趋势.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 10234040, 60476031 and 10474108.
文摘Detection wavelength is one of the key performance indices of infrared photodetectors. We study the character of detection wavelength of the strained InxGa1-xAs/GaAs very-long-wavelength (〉 12 μm) quantum well infrared photodetectors (VLW-QWIPs) characterized by the photoluminescence (PL) and photocurrent (PC) measurements. Based on the theoretical calculation and experimental data, we have built a practical model for the Inx Ga1-xAs/GaAs strained VLW-QWIPs, from which the interband transitions, intersubband transition and peak detection wavelength can be determined. Afterwards, the dependences of detection wavelength and device operation mode on the In mole fraction and InxGa1-xAs well width are presented, which will be helpful for device design and optimization.
文摘回顾了近10年基于半导体中量子限制效应红外探测器的进展.主要关注的是二维限制结构,即量子阱结构,形成的区别与传统红外光子探测的子带跃迁机理.在红外光电子领域作为新族的量子阱红外探测器(quantum well infrared photo-detector,QWIP)与最典型的红外探测器代表碲镉汞红外探测器进行了各自特色的分析,包括基本工作机理和材料与器件的制备技术等方面.对于QWIP发展的回顾提升了与碲镉汞红外探测器之间的互补关系.也给出了对于QWIP在未来发展方面的基本趋势.