EuS is one of typical ferromagnetic semiconductor using as spin filter in spintronic devices,and the doped one could be a good spin injector.Herein,we fabricate a spin-functional tunnel junction by epitaxially growing...EuS is one of typical ferromagnetic semiconductor using as spin filter in spintronic devices,and the doped one could be a good spin injector.Herein,we fabricate a spin-functional tunnel junction by epitaxially growing the ferromagnetic EuS film on Nb-doped SrTiO3.The improvement of Curie temperature up to 35 K is associated with indirect exchange through additional charge carriers at the interface of EuS/Nb:STO junction.Its magnetic field controlled current-voltage curves indicate the large magnetoresistance(MR)effect in EuS barriers as a highly spin-polarized injector.The negative MR is up to 60%in 10-nm EuS/Nb:STO at 4 T and 30 K.The MR is enhanced with increasing thickness of EuS barrier.The large negative MR effect over a wide temperature range makes this junction into a potential candidate for spintronic devices.展开更多
As a typical hole-doped cuprate superconductor,Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)(Bi2212)carrier doping is mostly determined by its oxygen content.Traditional doping methods can regulate its doping level within the range of...As a typical hole-doped cuprate superconductor,Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)(Bi2212)carrier doping is mostly determined by its oxygen content.Traditional doping methods can regulate its doping level within the range of hole doping.Here we report the first application of CaH_(2)annealing method in regulating the doping level of Bi2212.By continuously controlling the anneal time,a series of differently doped samples can be obtained.The combined experimental results of x-ray diffraction,scanning transmission electron microscopy,resistance and Hall measurements demonstrate that the CaH_(2)induced topochemical reaction can effectively change the oxygen content of Bi2212 within a very wide range,even switching from hole doping to electron doping.We also found evidence of a low-T_c superconducting phase in the electron doping side.展开更多
基金Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant Nos.XDB28000000 and XDB07000000)the National Key Research and Development Program of China(Grant No.2016YFA0300600)the Fund from the Beijing Municipal Science&Technology Commission(Grant No.Z191100007219012).
文摘EuS is one of typical ferromagnetic semiconductor using as spin filter in spintronic devices,and the doped one could be a good spin injector.Herein,we fabricate a spin-functional tunnel junction by epitaxially growing the ferromagnetic EuS film on Nb-doped SrTiO3.The improvement of Curie temperature up to 35 K is associated with indirect exchange through additional charge carriers at the interface of EuS/Nb:STO junction.Its magnetic field controlled current-voltage curves indicate the large magnetoresistance(MR)effect in EuS barriers as a highly spin-polarized injector.The negative MR is up to 60%in 10-nm EuS/Nb:STO at 4 T and 30 K.The MR is enhanced with increasing thickness of EuS barrier.The large negative MR effect over a wide temperature range makes this junction into a potential candidate for spintronic devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.11888101 and U1832202)the Chinese Academy of Sciences(Grant Nos.QYZDB-SSWSLH043 and XDB33000000)+4 种基金the K.C.Wong Education Foundation(Grant No.GJTD-2018-01)the Informatization Plan of Chinese Academy of Sciences(Grant No.CAS-WX2021SF-0102)supported by the Synergetic Extreme Condition User Facility(SECUF)supported by China Postdoctoral Science Foundation(Grant Nos.2020M680726 and YJ20200325)supported by US DOE(Grant Nos.DE-SC0010526 and DE-SC0012704)。
文摘As a typical hole-doped cuprate superconductor,Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)(Bi2212)carrier doping is mostly determined by its oxygen content.Traditional doping methods can regulate its doping level within the range of hole doping.Here we report the first application of CaH_(2)annealing method in regulating the doping level of Bi2212.By continuously controlling the anneal time,a series of differently doped samples can be obtained.The combined experimental results of x-ray diffraction,scanning transmission electron microscopy,resistance and Hall measurements demonstrate that the CaH_(2)induced topochemical reaction can effectively change the oxygen content of Bi2212 within a very wide range,even switching from hole doping to electron doping.We also found evidence of a low-T_c superconducting phase in the electron doping side.
