The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current.In the present work,the any...The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current.In the present work,the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO_(2)/Pt RRAM device.The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism,which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62004087,61474081,and 61534005)the Natural Science Foundation of Fujian Province,China(Grant No.2020J01815)+1 种基金the Natural Science Foundation of Zhangzhou,China(Grant No.ZZ2020J32)the Natural Science Foundation of Jiangxi Province,China(Grant No.20192ACBL20048).
文摘The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance current.In the present work,the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO_(2)/Pt RRAM device.The role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism,which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.
