Recently, the layered transition metal dichalcogenide 1 T MoTe2 has attracted considerable attention due to its non-saturating magnetoresistance, type-Ⅱ Weyl semimetal properties, superconductivity, and potential can...Recently, the layered transition metal dichalcogenide 1 T MoTe2 has attracted considerable attention due to its non-saturating magnetoresistance, type-Ⅱ Weyl semimetal properties, superconductivity, and potential candidate for twodimensional(2 D) topological insulator in the single-and few-layer limit. Here in this work, we perform systematic transport measurements on thin flakes of MoTe2 prepared by mechanical exfoliation. We find that MoTe2 flakes are superconducting and have an onset superconducting transition temperature Tc up to 5.3 K, which significantly exceeds that of its bulk counterpart. The in-plane upper critical field(Hc2||) is much higher than the Pauli paramagnetic limit, implying that the MoTe2 flakes have Zeeman-protected Ising superconductivity. Furthermore, the Tc and Hc2|| can be tuned by up to 320 mK and 400 mT by applying a gate voltage. Our result indicates that MoTe2 flake is a good candidate for studying exotic superconductivity with nontrivial topological properties.展开更多
Single-layered zirconium pentatelluride （ZrTes） has been predicted to be a large-gap two-dimensional （2D） topolog- ical insulator, which has attracted particular attention in topological phase transitions and pote...Single-layered zirconium pentatelluride （ZrTes） has been predicted to be a large-gap two-dimensional （2D） topolog- ical insulator, which has attracted particular attention in topological phase transitions and potential device applications. Herein, we investigated the transport properties in ZrTe5 films as a function of thickness, ranging from a few nm to several hundred nm. We determined that the temperature of the resistivity anomaly peak （Tp） tends to increase as the thickness decreases. Moreover, at a critical thickness of ~ 40 rim, the dominating carriers in the films change from n-type to p-type. A comprehensive investigation of Shubnikov-de Hass （SdH） oscillations and Hall resistance at variable temperatures revealed a multi-carrier transport tendency in the thin films. We determined the carrier densities and mobilities of two majority car- riers using the simplified two-carrier model. The electron carriers can be attributed to the Dirac band with a non-trivial Berry phase ~, while the hole carriers may originate from surface chemical reaction or unintentional doping during the microfabrication process. It is necessary to encapsulate the ZrTe5 film in an inert or vacuum environment to potentially achieve a substantial improvement in device quality.展开更多
基金Project supported by the Guangdong Innovative and Entrepreneurial Research Team Program,China(Grant No.2016ZT06D348)the National Natural Science Foundation of China(Grant No.11874193)the Shenzhen Fundamental Subject Research Program,China(Grant Nos.JCYJ20170817110751776 and JCYJ20170307105434022)
文摘Recently, the layered transition metal dichalcogenide 1 T MoTe2 has attracted considerable attention due to its non-saturating magnetoresistance, type-Ⅱ Weyl semimetal properties, superconductivity, and potential candidate for twodimensional(2 D) topological insulator in the single-and few-layer limit. Here in this work, we perform systematic transport measurements on thin flakes of MoTe2 prepared by mechanical exfoliation. We find that MoTe2 flakes are superconducting and have an onset superconducting transition temperature Tc up to 5.3 K, which significantly exceeds that of its bulk counterpart. The in-plane upper critical field(Hc2||) is much higher than the Pauli paramagnetic limit, implying that the MoTe2 flakes have Zeeman-protected Ising superconductivity. Furthermore, the Tc and Hc2|| can be tuned by up to 320 mK and 400 mT by applying a gate voltage. Our result indicates that MoTe2 flake is a good candidate for studying exotic superconductivity with nontrivial topological properties.
基金Project supported by Guangdong Innovative and Entrepreneurial Research Team Program(Grant No.2016ZT06D348)Shenzhen Peacock Program(Grant No.KQTD2016022619565991)
文摘Single-layered zirconium pentatelluride （ZrTes） has been predicted to be a large-gap two-dimensional （2D） topolog- ical insulator, which has attracted particular attention in topological phase transitions and potential device applications. Herein, we investigated the transport properties in ZrTe5 films as a function of thickness, ranging from a few nm to several hundred nm. We determined that the temperature of the resistivity anomaly peak （Tp） tends to increase as the thickness decreases. Moreover, at a critical thickness of ~ 40 rim, the dominating carriers in the films change from n-type to p-type. A comprehensive investigation of Shubnikov-de Hass （SdH） oscillations and Hall resistance at variable temperatures revealed a multi-carrier transport tendency in the thin films. We determined the carrier densities and mobilities of two majority car- riers using the simplified two-carrier model. The electron carriers can be attributed to the Dirac band with a non-trivial Berry phase ~, while the hole carriers may originate from surface chemical reaction or unintentional doping during the microfabrication process. It is necessary to encapsulate the ZrTe5 film in an inert or vacuum environment to potentially achieve a substantial improvement in device quality.
