铒、钪膜中离子注入氦的热解析行为

采用热解析法初步研究了铒、钪膜中离子注入氦的热解析行为。研究结果表明:同种元素铒中离子注入氦的热释放峰位相同,但膜的致密性将影响氦的释放量,结构疏松的膜中存在的孔洞是氦的快速释放通道;在相同注入剂量和能量条件下,铒、钪膜中注入氦的热释放峰位不同,这可能与氦在铒、钪膜中的深度分布及膜的致密性有关,利用质子增强背散射法测量出能量为60keV的4 He+在铒、钪膜中的注入深度分别为210,308nm。

金属氚化物中氦泡生长显微机制研究现状与发展趋势

氚是核聚变反应的关键核燃料,金属氚化物是国防领域及核聚变能源领域中的重要功能材料。氚衰变产生的氦原子及其演化过程严重影响金属氚化物的宏观性能,氦泡的形成与驻留又会影响金属氚化物的贮氚性能,金属氚化物中氦泡生长机制的研究是备受关注的重要科学问题。受限于氚的放射性和缺乏对氚与氦等轻元素原子的显微分析技术,氦泡生长模型的研究长期处于唯象理论阶段。近年来,随着电子显微分析技术的进步,提出了更加准确分析氦泡信息的新技术,氦泡生长显微机制研究取得了新的突破。本文将首先简要介绍金属氚化物中氦泡生长机制的主要理论与成果,然后介绍电子显微分析技术的发展及研究成果,最后针对氦泡生长显微机制的研究趋势做出展望。

Effects of helium irradiation dose and temperature on the damage evolution of Ti3SiC2 ceramic

The effects of 400 keV helium ion irradiation dose and temperature on the microstructure of the Ti3SiC2 ceramic were systematically investigated by grazing incidence x-ray diffraction, scanning electron microscopy, and transmission electron microscopy.The helium irradiation experiments were performed at both room temperature(RT) and 500℃ with a fluence up to 2.0 × 1017 He+/cm2 that resulted in a maximum damage of 9.6 displacements per atom.Our results demonstrate that He irradiations produce a large number of nanometer defects in Ti3SiC2 lattice and then cause the dissociation of Ti3SiC2 to TiC nano-grains with the increasing He fluence.Irradiation induced cell volume swelling of Ti3SiC2 at RT is slightly higher than that at 500℃, suggesting that Ti3SiC2 is more suitable for use in a high temperature environment.The temperature dependence of cell parameter evolution and the aggregation of He bubbles in Ti3SiC2 are different from those in Ti3AlC2.The formation of defects and He bubbles at the projected depth would induce the degradation of mechanical performance.

Microstructure evolution of zircaloy-4 during Ne ion irradiation and annealing: An in situ TEM investigation

The microstructural evolution of zircaloy-4 was studied, including the amorphization and recrystallization of Zr（Fe, Cr）2 precipitates, and the density of dislocations under in situ Ne ion irradiation and post annealing. The results show that irradiation at a relatively high temperature and dose induces the formation of nanocrystals in pre-amorphized Zr（Fe, Cr）2 precipitates. The recrystallized nanocrystals also have the structure of hcp-Zr（Fe, Cr）2. The formation of the nanocrystals is thought to be the consequence of competition between atomistic disordering and the recrystallization of precipitates under ion irradiation. The free energy of the nanocrystal is lower than that of the amorphous state, which is another reason for the recrystallization of the precipitates. With increased annealing temperature, the density of the nanocrystals is increased. The dislocation density sharply decreases with the increase in the annealing temperature, and its size increases.

The effect of Si content on the martensitic transformation temperature of Ni_(55.5)Fe_(18)Ga_(26.5-x)Si_x alloys

This paper investigates the effects of substitution of Si for Ga on the martensitic transformation behaviours in Ni-Fe-Ga alloys by using optical metallographic microscope and differential scanning calorimetry （DSC） methods. The structure type of Ni55.5Fe18Ga26.5-xSix alloys is determined by x-ray diffraction （XRD）, and the XRD patterns show the microstructure of Ni-Fe-Ga-Si alloys transformed from body-centred tetragonal martensite （with Si content x = 0） to body-centred cubic austenite （with x = 2） at room temperature. The martensitic transformation temperatures of the Ni55.sFelsGa26.5-xSi~ alloys decrease almost linearly with increasing Si content in the Si content range of x _~ 3. Thermal treatment also plays an important role on martensitic transformation temperatures in the Ni-Fe-Ga^Si alloy. The valence electronic concentrations, size factor, L21 degree of order and strength of parent phase influence the martensitic transformation temperatures of the Ni-Fe-Ga-Si alloys. An understanding of the relationship between martensitic transformation temperatures and Si content will be significant for designing an appropriate Ni-Fe-Ga-Si alloy for a specific application at a given temperature.

Fabrication processing effects on the microstructure and morphology of erbium film

The effect of substrate temperature on the microstructure and the morphology of erbium film are systematically investigated using X-ray diffraction （XRD） and scanning electron microscopy （SEM）. All the erbium films are grown by electron-beam vapor deposition （EBVD）. A novel preparation method for observing the cross-section morphology of the erbium film is developed. The films deposited at 200 ℃ have （002） preferred orientation, and the films deposited at 450 ℃ have a mixed （100） and （101） texture, due to the different growth mechanisms of surface energy minimization and recrystallization, respectively. The peak positions and the full widths at half maximum （FWHMs） of erbium diffraction lines （100）, （002）, and （101） shift towards higher angles and decrease with the increasing substrate temperature in a largely uniform manner, respectively. Also, the lattice constants decrease with increasing temperature. The transition in the film stresses can be used to interpret the changes in peak positions, FWHMs, and lattice constants. The stress is compressive for the as-growth fihns, and is counteracted by the tensile stress formed during the process of temperature cooling to room temperature. The tensile stress mainly originates from the difference in the coefficients of thermal expansion of the substrate-film couple.

碳离子辐照对纯钨组织结构及表面硬度的影响

采用扫描电子显微镜、透射电子显微镜及纳米压痕仪研究了700℃下碳离子辐照对钨的表面形貌、组织结构和表面硬度的影响。结果表明,碳离子辐照会导致样品表面出现辐照蚀坑,且随着辐照剂量的增加,辐照蚀坑尺寸变大。碳离子辐照在样品内部产生了大量位错环,且随辐照剂量增加,位错环数密度和尺寸均增大。碳离子辐照使钨表面发生严重的辐照硬化效应,样品表面硬度随辐照剂量增加明显增大。当辐照剂量达到8.0dpa时,钨表面平均硬度达到15.85GPa。辐照产生的位错环是辐照硬化的主要原因。

Effect of microstructure on ~3He migration in TiT_(1.9) films

Two kinds of films were prepared to study the effect of microstructure on helium migration in Ti tritides. Both films showed different release behaviors and helium bubble distributions. In the film consisting of columnar grains, a twolayered structure was observed. Inclusions with a strip feature were found at the grain boundary, and no helium bubbles were distributed in these inclusions. However, helium preferred to migrate to the boundaries of these inclusions. Bubble linkage as a ribbon-like feature developed parallel to the film surface in the film consisting of columnar grains. More cracks were developed at the grain boundaries of the film consisting of columnar grains, although the helium content in the film consisting of columnar grains was less than that in the film consisting of equiaxed grains. A surface region with a small number of bubbles, or ＂depleted zone＂, was observed near the surface. The cracks extending to the film surface were the pathways of the critical helium released from the film. The helium migration was strongly influenced by the grain microstructure.

Microstructure and hardening effect of pure tungsten and ZrO2 strengthened tungsten under carbon ion irradiation at 700℃

Microstructure evolution and hardening effect of pure tungsten and W-1.5%ZrO_(2) alloy under carbon ion irradiation are investigated by using transmission electron microscopy and nano-indentation.Carbon ion irradiation is performed at 700℃ with irradiation damages ranging from 0.25 dpa to 2.0 dpa.The results show that the irradiation defect clusters are mainly in the form of dislocation loop.The size and density of dislocation loops increase with irradiation damages intensifying.The W-1.5%ZrO_(2) alloy has a smaller dislocation loop size than that of pure tungsten.It is proposed that the phase boundaries have the ability to absorb and annihilate defects and the addition of ZrO_(2) phase improves the sink strength for irradiation defects.It is confirmed that the W-1.5% ZrO_(2) alloy shows a smaller change in hardness than the pure tungsten after being irradiated.From the above results,we conclude that the addition of ZrO_(2) into tungsten can significantly reduce the accumulation of irradiated defects and improve the irradiation resistance behaviors of the tungsten materials.

氘化及氦离子注入对钪膜的表面形貌和相结构的影响

采用XRD,SEM,AFM等详细研究了氘化及氦离子注入对钪膜的表面形貌和相结构的影响.结果表明,在单晶硅及抛光Mo基片上制备的钪膜均具有(002)晶面择优取向;钪膜氘化后表面会出现大量孔洞,氘化后氘化钪(ScD2)晶粒长大,但内部会残留少量未完全氘化反应的晶粒尺寸较小的ScD_(0.33)/Sc晶粒;氦离子注入对钪及氘化钪的表面形貌没有明显影响,离子注入的氦将在钪及氘化钪晶格中聚集成泡,导致氦离子注入层中的钪及氘化钪衍射峰向低角度偏移,并且氦泡的聚集具有择优取向性.