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Fast patterning and dry-etch of SiN_x for high resolution nanoimprint templates
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作者 疏珍 万景 +4 位作者 陆冰睿 谢申奇 陈宜方 屈新萍 刘冉 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第6期138-141,共4页
We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography(EBL) and a dry etch technique on a SiNx substrate,intended for large area manufacturing.To this end,the... We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography(EBL) and a dry etch technique on a SiNx substrate,intended for large area manufacturing.To this end,the highly sensitive chemically amplified resist(CAR),NEB-22,with negative tone was used.The EBL process first defines the template pattern in NEB-22,which is then directly used as an etching mask in the subsequent reactive ion etching(RIE) on the SiNx to form the desired templates.The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied,indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask.Nevertheless,our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing. 展开更多
关键词 SiNx templates NANOIMPRINT NEB-22 electron bean lithography reactive ion etch
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