Secondary ion mass spectrometry (SIMS) is a standard technique for characterization of dopant distribution in semiconductor industry. In the ultra-shallow junction (USJ) application, the interested depth scale was ext...Secondary ion mass spectrometry (SIMS) is a standard technique for characterization of dopant distribution in semiconductor industry. In the ultra-shallow junction (USJ) application, the interested depth scale was extended into the surface transient area of SIMS. There is several improved approach reviewed in this paper that can meet the requirements for the USJ characterization. Sputtering with a low energy primary ion beam incident at a large angle respect to the simple surface normal can effectively minimize the depth of the surface transient area, as well as the length of the profile tail. Oxygen leak can reduce the transient ion yield change, but induces lower depth resolution. Quadrupole SIMS can be used in B profile. As and P profiles, however, need magnetic analyzer with higher mass resolution.展开更多
着重研究了机械冲击和应力对无铅BGA 封装焊点可靠性的影响,介绍了BGA 封装的可靠性力学试验(跌落、弯曲试验)及其分析方法。通过对力学试验中失效焊点的分析以及借助A N S Y S 模拟工具,找出引起失效的根本原因,为开发性能更好、高可...着重研究了机械冲击和应力对无铅BGA 封装焊点可靠性的影响,介绍了BGA 封装的可靠性力学试验(跌落、弯曲试验)及其分析方法。通过对力学试验中失效焊点的分析以及借助A N S Y S 模拟工具,找出引起失效的根本原因,为开发性能更好、高可靠性的无铅材料、改进无铅工艺提供依据。展开更多
文摘Secondary ion mass spectrometry (SIMS) is a standard technique for characterization of dopant distribution in semiconductor industry. In the ultra-shallow junction (USJ) application, the interested depth scale was extended into the surface transient area of SIMS. There is several improved approach reviewed in this paper that can meet the requirements for the USJ characterization. Sputtering with a low energy primary ion beam incident at a large angle respect to the simple surface normal can effectively minimize the depth of the surface transient area, as well as the length of the profile tail. Oxygen leak can reduce the transient ion yield change, but induces lower depth resolution. Quadrupole SIMS can be used in B profile. As and P profiles, however, need magnetic analyzer with higher mass resolution.